Datasheet > PG24GSUSC

PG24GSUSC

更新时间： 2024-11-21 17:15:23

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	35K
描述
USC

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PG24GSUSC 数据手册

PG24GSUSC

SEMICONDUCTOR

Single Line TVS Diode for ESD

Protection in Portable Electronics

TECHNICAL DATA

Protection in Portable Electronics Applications.

FEATURES

· 350 Watts peak pulse power (tp=8/20μs)

· Transient protection for data lines to

IEC61000-4-4(EFT) 40A(tp=5/50ns)

IEC61000-4-5(Lightning) 8A(tp=8/20μs)

· Small package for use in portable electronics.

· Suitable replacement for Multi-Layer Varistors in ESD

protection applications.

DIM

MILLIMETERS

2.50+0.2

1.25+0.05

0.90 0.05

· Protects on I/O or power line.

· Low clamping voltage.

0.30 0.06

1.70 0.05

0.27 0.10

0.126 0.03

· Low leakage current.

0~0.1

· Suffix U : Qualified to AEC-Q101.

ex) PG24GSUSC-RTK/HU

1.0 MAX

1. ANODE

0.15+0.05

2. CATHODE

0.4

+4/-2

4~6

APPLICATIONS

· Cell phone handsets and accessories.

· Microprocessor based equipment.

· Notebooks, desktops, & servers.

· Portable instrumentation.

USC

Marking

CATHODE MARK

Lot No.

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL

RATING

350

UNIT

P_PK

I_PP

T_j

Peak Pulse Power (tp=8/20μs)

Peak Pulse Current (tp=8/20μs)

Operating Temperature

Type Name

150

℃

T_stg

Storage Temperature

-55∼ 150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

SYMBOL

V_RWM

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_BR

I_R

I_t=1mA

27.2

V_RWM=24V

㎂

I_PP=5A, tp=8/20㎲

I_PP=8A, tp=8/20 ㎲

V_R=0V, f=1MHz

V_C

C_J

Clamping Voltage

Junction Capacitance

Electrostatic discharge

200

Air

±20

V_ESD

IEC61000-4-2

Contact

2018. 04. 10

Revision No : 3

1/2

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