Datasheet > PG1H10ATL

PG1H10ATL

更新时间： 2024-11-20 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	344K
描述
TO-LL

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中文翻译

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数据手册

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PG1H10ATL 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PG1H10ATL

NIKO-SEM

TO-LL

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

274A

1.98mΩ

G(Pin1): GATE

D: DRAIN

S(Pin2-Pin8): SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

100

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 ° C

274

Continuous Drain Current

I_D

T_C= 100 ° C

173

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

1040

L = 1mH

E_AS

480

T_C= 25 ° C

T_C= 100 ° C

312

Power Dissipation

P_D

125

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

TYPICAL

MAXIMUM

UNITS

° C / W

0.4

R_JC

R_JA

¹Pulse width limited by maximum junction temperature.

N-44-4

REV 1.2

12 3 4

中文翻译

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