Datasheet > PG15GSUSC

PG15GSUSC

更新时间： 2024-11-17 06:00:23

品牌	Logo	应用领域
KEC		电子便携式
页数	文件大小	规格书
2页	439K
描述
Protection in Portable Electronics Applications.

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PG15GSUSC 数据手册

PG15GSUSC

SEMICONDUCTOR

Single Line TVS Diode for ESD

Protection in Portable Electronics

TECHNICAL DATA

Protection in Portable Electronics Applications.

FEATURES

350 Watts peak pulse power (tp=8/20 s)

Transient protection for data lines to

IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)

IEC 61000-4-4(EFT) 40A(tp=5/50ns)

IEC 61000-4-5(Lightning) 15A(tp=8/20 s)

Small package for use in portable electronics.

Suitable replacement for Multi-Layer Varistors in ESD protection applications.

Protects on I/O or power line.

DIM

MILLIMETERS

2.50+0.1

1.25+0.05

0.90 0.05

0.30+0.06/-0.04

Low clamping voltage.

1.70 0.05

MIN 0.17

Low leakage current.

0.126 0.03

1. ANODE

0~0.1

1.0 MAX

2. CATHODE

0.15+0.05

0.4+0.05

+4/-2

4~6

APPLICATIONS

Cell phone handsets and accessories.

Microprocessor based equipment.

Personal digital assistants (PDA s)

Notebooks, desktops, & servers.

Portable instrumentation.

USC

Pagers peripherals.

Marking

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

Type Name

SYMBOL

RATING

350

UNIT

P_PK

I_PP

T_j

Peak Pulse Power (tp=8/20 s)

Peak Pulse Current (tp=8/20 s)

Operating Temperature

-55 150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage

SYMBOL

V_RWM

V_BR

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

I_t=1mA

16.7

I_R

V_RWM=15V

V_C

I_PP=12A, tp=8/20 s

V_R=0V, f=1MHz

C_J

Junction Capacitance

150

2007. 9. 10

Revision No : 1

1/2

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