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PG12FXTE6 PDF预览

PG12FXTE6

更新时间: 2024-02-18 06:10:49
品牌 Logo 应用领域
KEC 二极管电视电子便携式
页数 文件大小 规格书
2页 33K
描述
TVS Diode Array for ESD Protection in Portable Electronics

PG12FXTE6 技术参数

生命周期:Not Recommended包装说明:TES6, 6 PIN
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.82最小击穿电压:13.3 V
配置:COMMON ANODE, 5 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F6
最大非重复峰值反向功率耗散:150 W元件数量:5
端子数量:6最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:12 V表面贴装:YES
技术:AVALANCHE端子形式:FLAT
端子位置:DUAL

PG12FXTE6 数据手册

 浏览型号PG12FXTE6的Datasheet PDF文件第2页 
PG12FXTE6  
SEMICONDUCTOR  
TVS Diode Array for ESD  
TECHNICAL DATA  
Protection in Portable Electronics  
Protection in Portable Electronics Applications.  
B
B1  
FEATURES  
150 Watts peak pulse power (tp=8/20 s)  
Transient protection for data lines to IEC 61000-4-2(ESD)  
15kV(Air), 8kV(Contact).  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
_
1.6+0.05  
_
1.2+0.05  
B1  
C
Protects five I/O lines.  
0.50  
_
0.2+0.05  
4
Low clamping voltage.  
D
H
J
_
0.5+0.05  
Low operating and leakage current.  
Small package for use in portable electronics.  
_
0.12+0.05  
P
P
P
5
APPLICATIONS  
1. D1  
Cell phone handsets and accessories.  
Cordless phones.  
2. COMMON ANODE  
3. D2  
4. D3  
5. D4  
6. D5  
Personal digital assistants (PDA’s)  
Notebooks, desktops, & servers.  
Portable instrumentation.  
Set-Top Box, DVD Player.  
Digital Camera.  
TES6  
Marking  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
6
5
4
Lot No.  
SYMBOL  
RATING  
150  
UNIT  
W
PPK  
IPP  
Tj  
Peak Pulse Power (tp=8/20 s)  
Peak Pulse Current (tp=8/20 s)  
Operating Temperature  
Type Name  
2X  
6
A
-55 150  
-55 150  
Tstg  
Storage Temperature  
1
2
3
6
5
4
3
D5  
D1  
D4  
D3  
D2  
1
2
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
SYMBOL  
VRWM  
VBR  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
12  
UNIT  
V
-
-
-
-
-
-
It=1mA  
13.3  
-
V
IR  
VRWM=5V  
-
-
0.5  
25  
A
V
VC  
IPP=6A, tp=8/20 s  
VR=0V, f=1MHz  
CJ  
Junction Capacitance  
-
-
60  
pF  
Between I/O Pins and GND  
2008. 9. 10  
Revision No : 2  
1/2  

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