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PG12BUS23 PDF预览

PG12BUS23

更新时间: 2024-02-10 11:05:24
品牌 Logo 应用领域
KEC 二极管电视光电二极管电子便携式局域网
页数 文件大小 规格书
2页 396K
描述
Low Capacitance TVS Diode for ESD Protection in Portable Electronics

PG12BUS23 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.73
最小击穿电压:13.3 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G3最大非重复峰值反向功率耗散:300 W
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大重复峰值反向电压:12 V表面贴装:YES
技术:AVALANCHE端子形式:GULL WING
端子位置:DUALBase Number Matches:1

PG12BUS23 数据手册

 浏览型号PG12BUS23的Datasheet PDF文件第2页 
PG12BUS23  
SEMICONDUCTOR  
Low Capacitance TVS Diode for ESD  
Protection in Portable Electronics  
TECHNICAL DATA  
Protection in Portable Electronics Applications.  
E
L
B
L
FEATURES  
DIM  
A
MILLIMETERS  
_
300 Watts peak pulse power (tp=8/20 s)  
Transient protection for high-speed data lines to  
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)  
IEC 61000-4-4(EFT) 40A(tp=5/50ns)  
IEC 61000-4-5(Lightning) 15A(tp=8/20 s)  
Standard SOT-23 Package.  
+
2.93 0.20  
B
C
D
E
1.30+0.20/-0.15  
1.30 MAX  
2
3
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
1
G
H
J
0.95  
0.13+0.10/-0.05  
K
L
0.00 ~ 0.10  
0.55  
P
P
Tow devices will protect one line.  
Low capacitance-5pF.  
0.20 MIN  
1.00+0.20/-0.10  
7
M
N
P
Low clamping voltage.  
M
ESD Protection>25kilovolts.  
1. RECTIFLER  
2. ZENER (TVS)  
3. N.C.  
APPLICATIONS  
Cellular Phone Handsets and Accessories.  
Microprocessor based equipment.  
Personal Digital Assistants (PDA’s)  
Notebooks, desktops PC, & servers.  
High-Speed data lines.  
SOT-23  
Portable Instrumentation.  
LAN/WAN equipment.  
Marking  
Lot No.  
3
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
Type Name  
12B  
2
SYMBOL  
RATING  
300  
UNIT  
W
1
PPK  
IPP  
Tj  
Peak Pulse Power (tp=8/20 s)  
Peak Pulse Current (tp=8/20 s)  
Operating Temperature  
15  
A
3
-55 150  
-55 150  
2
1
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
SYMBOL  
VRWM  
VBR  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
V
-
-
-
-
-
-
-
12  
-
It=1mA  
13.3  
V
IR  
VRWM=12V  
-
-
-
1
A
V
VC  
25  
5
IPP=15A, tp=8/20 s  
CJ  
VR=0V, f=1MHz (Pin 2 to 1)  
Junction Capacitance  
pF  
2006. 11. 8  
Revision No : 1  
1/2  

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