Datasheet > PG108

PG108

更新时间： 2024-11-16 12:56:59

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	293K
描述
1.0A plug-in fast recovery diode 800V DO-41 series

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中文翻译

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数据手册

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PG108 数据手册

PG100 - PG1010

AXIAL LEADED SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: D O - 4 1

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.35 grams (approx.)

Mounting Position: Any

DO-41

Min

Dim

Max

25.40

4.06

5.21

0.864

2.72

0.71

Marking: Type Number

2.00

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

PG100 PG101 PG102 PG104 PG106 PG108 PG1010

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.0

Average Rectified Output Current

(Note 1)

@T_A= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.0

µA

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

5.0

Typical Junction Capacitance (Note 2)

C^j

Typical Thermal Resistance Junction to Ambient

(Note 1)

R^ꢀ^JA

K/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +125

-65 to +150

°C

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

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