Datasheet > PF515BL

PF515BL

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	193K
描述
SOT-223

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中文翻译

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数据手册

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PF515BL 数据手册

PF515BL

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

SOT-223

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

150V

R_DS(ON)

I_D

650mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

UNITS

V_GS

±20

T_A= 25 °C

0.8

Continuous Drain Current

I_D

T_A= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

1.1

L = 1mH

E_AS

0.6

T_A= 25 °C

T_A= 100 °C

1.9

Power Dissipation³

P_D

1.2

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

t ≦10s

R_JA

Junction-to-Ambient²

Steady-State

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= 250A

_DS= V_GS, I_D= 250A

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

150

1.3 1.87 2.3

V_DS= 0V, V_GS= ±20V

V_DS= 120V, V_GS= 0V

±100 nA

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 100V, V_GS= 0V, T_J= 125 °C

REV1.0

H-20-4

12 3 4

中文翻译

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