Datasheet > PF48F5000M0Y3B0

PF48F5000M0Y3B0

更新时间： 2024-11-15 10:22:11

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
68页	1704K
描述
Memory IC

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数据手册

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PF48F5000M0Y3B0 数据手册

Intel StrataFlash Cellular Memory (M18)

Datasheet

Product Features

High-Performance Read, Program and Erase

Power

— Core voltage: 1.7 V - 2.0 V

— 96 ns initial read access

— 108 MHz with zero wait-state synchronous

burst reads: 7 ns clock-to-data output

— 133 MHz with zero wait-state synchronous

burst reads: 5.5 ns clock-to-data output

— 8-, 16-, and continuous-word

synchronous-burst Reads

— Programmable WAIT configuration

— Customer-configurable output driver

impedance

— Buffered Programming:

— I/O voltage: 1.7 V - 2.0 V

— Standby current: 60 µA (typ) for 512-Mbit,

65 nm

— Deep Power-Down mode: 2 µA (typ)

— Automatic Power Savings mode

— 16-word synchronous-burst read current:

23 mA (typ) @ 108 MHz; 24 mA (typ) @

133 MHz

Software

— Intel^®Flash Data Integrator (Intel^®FDI)

optimized

2.0 µs/Word (typ), 512-Mbit 65 nm;

Block Erase: 0.9 s per block (typ)

— 20 µs (typ) program/erase suspend

Architecture

— Basic Command Set and Extended

Command Set compatible

— Common Flash Interface

— 16-bit wide data bus

— Multi-Level Cell Technology

Security

— OTP Registers:

— Symmetrically-Blocked Array Architecture

— 256-Kbyte Erase Blocks

64 unique pre-programmed bits

2112 user-programmable bits

— Absolute write protection with V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 1-Gbit device: Eight 128-Mbit partitions

— 512-Mbit device: Eight 64-Mbit partitions

— 256-Mbit device: Eight 32-Mbit partitions.

— 128-Mbit device: Eight 16-Mbit partitions.

— Read-While-Program and Read-While-Erase

— Status Register for partition/device status

— Blank Check feature

Density and Packaging

— Density: 128-, 256-, and 512-Mbit, and 1-

Gbit

— Address-data multiplexed and non-

multiplexed interfaces

— x16D (105-ball) Flash SCSP

— x16C (107-ball) Flash SCSP

— 0.8 mm pitch lead-free solder-ball

Quality and Reliability

— Expanded temperature: –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X Process Technology (65 nm)

— ETOX™ IX Process Technology (90 nm)

Document Number: 309823-009US

July 2007

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与PF48F5000M0Y3B0相关器件

型号	品牌	获取价格	描述	数据表
PF48F5000M0Y3C0	INTEL	获取价格	Memory IC
PF48F5000M0YBB0	NUMONYX	获取价格	Flash, 32MX16, 96ns, PBGA105,
PF48F5000M0YBC0	NUMONYX	获取价格	Flash, 32MX16, 96ns, PBGA107,
PF48F5000M0YCB0	NUMONYX	获取价格	Flash, 32MX16, 96ns, PBGA105,
PF48F5000M0YCC0	NUMONYX	获取价格	Flash, 32MX16, 96ns, PBGA107,
PF48F5000M0YUB0	NUMONYX	获取价格	Flash, 32MX16, 96ns, PBGA105,
PF48F5000M0YUC0	NUMONYX	获取价格	Flash, 32MX16, 96ns, PBGA107,
PF48F5000M0YWB0	NUMONYX	获取价格	Flash, 32MX16, 96ns, PBGA105,
PF48F6000M0Y0B0	NUMONYX	获取价格	Flash, 64MX16, 96ns, PBGA105,
PF48F6000M0Y0BE	INTEL	获取价格	Flash, 64MX16, 96ns, PBGA105, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, SCSP-105