5秒后页面跳转
PF48F4400P0Z3C0 PDF预览

PF48F4400P0Z3C0

更新时间: 2024-02-07 13:28:25
品牌 Logo 应用领域
恒忆 - NUMONYX 蜂窝
页数 文件大小 规格书
139页 2135K
描述
StrataFlash® Cellular Memory

PF48F4400P0Z3C0 数据手册

 浏览型号PF48F4400P0Z3C0的Datasheet PDF文件第2页浏览型号PF48F4400P0Z3C0的Datasheet PDF文件第3页浏览型号PF48F4400P0Z3C0的Datasheet PDF文件第4页浏览型号PF48F4400P0Z3C0的Datasheet PDF文件第5页浏览型号PF48F4400P0Z3C0的Datasheet PDF文件第6页浏览型号PF48F4400P0Z3C0的Datasheet PDF文件第7页 
®
Numonyx™ StrataFlash Cellular Memory  
(M18)  
Datasheet  
Product Features  
„ High-Performance Read, Program and Erase  
„ Power  
— Core voltage: 1.7 V - 2.0 V  
— 96 ns initial read access  
— 108 MHz with zero wait-state synchronous  
burst reads: 7 ns clock-to-data output  
— 133 MHz with zero wait-state synchronous  
burst reads: 5.5 ns clock-to-data output  
— 8-, 16-, and continuous-word  
synchronous-burst Reads  
— Programmable WAIT configuration  
— Customer-configurable output driver  
impedance  
— Buffered Programming:  
— I/O voltage: 1.7 V - 2.0 V  
— Standby current: 60 µA (typ) for 512-Mbit,  
65 nm  
— Deep Power-Down mode: 2 µA (typ)  
— Automatic Power Savings mode  
— 16-word synchronous-burst read current:  
23 mA (typ) @ 108 MHz; 24 mA (typ) @  
133 MHz  
„ Software  
— Numonyx™ Flash Data Integrator  
(Numonyx™ FDI) optimized  
— Basic Command Set and Extended  
Command Set compatible  
2.0 µs/Word (typ), 512-Mbit 65 nm;  
Block Erase: 0.9 s per block (typ)  
— 20 µs (typ) program/erase suspend  
„ Architecture  
— Common Flash Interface  
— 16-bit wide data bus  
— Multi-Level Cell Technology  
„ Security  
— OTP Registers:  
— Symmetrically-Blocked Array Architecture  
— 256-Kbyte Erase Blocks  
64 unique pre-programmed bits  
2112 user-programmable bits  
— Absolute write protection with VPP = GND  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
— 1-Gbit device: Eight 128-Mbit partitions  
— 512-Mbit device: Eight 64-Mbit partitions  
— 256-Mbit device: Eight 32-Mbit partitions.  
— 128-Mbit device: Eight 16-Mbit partitions.  
— Read-While-Program and Read-While-Erase  
— Status Register for partition/device status  
— Blank Check feature  
„ Density and Packaging  
— Density: 128-, 256-, and 512-Mbit, and 1-  
Gbit  
— Address-data multiplexed and non-  
multiplexed interfaces  
— x16D (105-ball) Flash SCSP  
— x16C (107-ball) Flash SCSP  
— 0.8 mm pitch lead-free solder-ball  
„ Quality and Reliability  
— Expanded temperature: –30 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ X Process Technology (65 nm)  
— ETOX™ IX Process Technology (90 nm)  
Order Number: 309823-11  
April 2008  

与PF48F4400P0Z3C0相关器件

型号 品牌 获取价格 描述 数据表
PF48F4400P0Z3Q0 NUMONYX

获取价格

StrataFlash® Cellular Memory
PF48F4400P0Z3W0 NUMONYX

获取价格

StrataFlash® Cellular Memory
PF48F4400P0ZFC0 NUMONYX

获取价格

StrataFlash® Cellular Memory
PF48F4400P0ZFQ0 NUMONYX

获取价格

StrataFlash® Cellular Memory
PF48F4400P0ZFW0 NUMONYX

获取价格

StrataFlash® Cellular Memory
PF48F4444PPVBQ0 INTEL

获取价格

Intel StrataFlash Embedded Memory
PF48F4444PPVTQ0 INTEL

获取价格

Intel StrataFlash Embedded Memory
PF48F4P0VB00 INTEL

获取价格

Intel StrataFlash Embedded Memory
PF48F4P0VBQ0 INTEL

获取价格

Intel StrataFlash Embedded Memory
PF48F4P0VT00 INTEL

获取价格

Intel StrataFlash Embedded Memory