Datasheet > PF48F4400P0VBQEA

PF48F4400P0VBQEA

更新时间： 2024-01-18 18:35:37

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
98页	1366K
描述
1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage

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中文翻译

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数据手册
替代型号

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PF48F4400P0VBQEA 数据手册

256Mb and 512Mb (256Mb/256Mb), P30-65nm

Features

Micron Parallel NOR Flash Embedded

Memory (P30-65nm)

JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx,

RD48F4400P0VBQEx, RC48F4400P0VB0Ex,

PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx

• Security

Features

• High performance

– One-time programmable register: 64 OTP bits,

programmed with unique information from Mi-

cron; 2112 OTP bits available for customer pro-

gramming

– 100ns initial access for Easy BGA

– 110ns initial access for TSOP

– 25ns 16-word asychronous page read mode

– 52 MHz (Easy BGA) with zero WAIT states and

17ns clock-to-data output synchronous burst

read mode

– Absolute write protection: V_PP= V_SS

– Power-transition erase/program lockout

– Individual zero-latency block locking

– Individual block lock-down

– Password access

• Software

– 4-, 8-, 16-, and continuous word options for burst

mode

– Buffered enhanced factory programming (BEFP)

at 2 MB/s (TYP) using a 512-word buffer

– 1.8V buffered programming at 1.14 MB/s (TYP)

using a 512-word buffer

– 25μs (TYP) program suspend

– 25μs (TYP) erase suspend

– Flash Data Integrator optimized

– Basic command set and extended function Inter-

face (EFI) command set compatible

– Common flash interface

• Architecture

– MLC: highest density at lowest cost

– Asymmetrically blocked architecture

– Four 32KB parameter blocks: top or bottom con-

figuration

– 128KB main blocks

– Blank check to verify an erased block

• Voltage and power

• Density and Packaging

– 56-lead TSOP package (256Mb only)

– 64-ball Easy BGA package (256Mb, 512Mb)

– QUAD+ and SCSP packages (256Mb, 512Mb)

– 16-bit wide data bus

• Quality and reliabilty

– V_CC(core) voltage: 1.7V to 2.0V

– V_CCQ(I/O) voltage: 1.7V to 3.6V

– Standy current: 65µA (TYP) for 256Mb

– 52 MHz continuous synchronous read current:

21mA (TYP), 24mA (MAX)

– JESD47 compliant

– Operating temperature: –40°C to +85°C

– Minimum 100,000 ERASE cycles per block

– 65nm process technology

PDF: 09005aef84566799

p30_65nm_MLC_256Mb-512mb.pdf - Rev. C 12/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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中文翻译

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PF48F4400P0VBQEA 替代型号

型号	品牌	替代类型	描述	数据表
PF48F4000P0ZBQEA	MICRON	完全替代	1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage
PF48F4400P0VBQEF	MICRON	完全替代	256Mb and 512Mb (256Mb/256Mb), P30-65nm
PF48F4000P0ZBQEF	MICRON	完全替代	256Mb and 512Mb (256Mb/256Mb), P30-65nm

与PF48F4400P0VBQEA相关器件

型号	品牌	获取价格	描述	数据表
PF48F4400P0VBQEE	MICRON	获取价格	1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage
PF48F4400P0VBQEF	MICRON	获取价格	256Mb and 512Mb (256Mb/256Mb), P30-65nm
PF48F4400P0VBQEK	MICRON	获取价格	256Mb and 512Mb (256Mb/256Mb), P30-65nm
PF48F4400P0VTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
PF48F4400P0Z0C0	NUMONYX	获取价格	StrataFlash® Cellular Memory
PF48F4400P0Z0Q0	NUMONYX	获取价格	StrataFlash® Cellular Memory
PF48F4400P0Z0W0	NUMONYX	获取价格	StrataFlash® Cellular Memory
PF48F4400P0Z3C0	NUMONYX	获取价格	StrataFlashÂ® Cellular Memory
PF48F4400P0Z3Q0	NUMONYX	获取价格	StrataFlash® Cellular Memory
PF48F4400P0Z3W0	NUMONYX	获取价格	StrataFlashÂ® Cellular Memory

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