是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | TFBGA, BGA88,8X12,32 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | Is Samacsys: | N |
最长访问时间: | 88 ns | 其他特性: | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE |
启动块: | BOTTOM | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | NO |
JESD-30 代码: | R-PBGA-B88 | 长度: | 11 mm |
内存密度: | 536870912 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
部门数/规模: | 8, 510 | 端子数量: | 88 |
字数: | 33554432 words | 字数代码: | 32000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 32MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装等效代码: | BGA88,8X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 页面大小: | 4 words |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 1.8,1.8/3.3 V | 编程电压: | 1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
部门规模: | 16K,64K | 最大待机电流: | 0.000005 A |
子类别: | Flash Memories | 最大压摆率: | 0.051 mA |
最大供电电压 (Vsup): | 2 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
切换位: | NO | 类型: | NOR TYPE |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PF48F4400P0VBQEA | MICRON |
获取价格 |
1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage | |
PF48F4400P0VBQEE | MICRON |
获取价格 |
1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage | |
PF48F4400P0VBQEF | MICRON |
获取价格 |
256Mb and 512Mb (256Mb/256Mb), P30-65nm | |
PF48F4400P0VBQEK | MICRON |
获取价格 |
256Mb and 512Mb (256Mb/256Mb), P30-65nm | |
PF48F4400P0VTQ0 | INTEL |
获取价格 |
Intel StrataFlash Embedded Memory | |
PF48F4400P0Z0C0 | NUMONYX |
获取价格 |
StrataFlash® Cellular Memory | |
PF48F4400P0Z0Q0 | NUMONYX |
获取价格 |
StrataFlash® Cellular Memory | |
PF48F4400P0Z0W0 | NUMONYX |
获取价格 |
StrataFlash® Cellular Memory | |
PF48F4400P0Z3C0 | NUMONYX |
获取价格 |
StrataFlash® Cellular Memory | |
PF48F4400P0Z3Q0 | NUMONYX |
获取价格 |
StrataFlash® Cellular Memory |