Datasheet > PF48F4400P0R3Q0

PF48F4400P0R3Q0

更新时间： 2024-01-20 03:14:52

品牌	Logo	应用领域
恒忆 - NUMONYX		蜂窝
页数	文件大小	规格书
139页	2135K
描述
StrataFlashÂ® Cellular Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PF48F4400P0R3Q0 数据手册

Numonyx™ StrataFlash Cellular Memory

(M18)

Datasheet

Product Features

High-Performance Read, Program and Erase

Power

— Core voltage: 1.7 V - 2.0 V

— 96 ns initial read access

— 108 MHz with zero wait-state synchronous

burst reads: 7 ns clock-to-data output

— 133 MHz with zero wait-state synchronous

burst reads: 5.5 ns clock-to-data output

— 8-, 16-, and continuous-word

synchronous-burst Reads

— Programmable WAIT configuration

— Customer-configurable output driver

impedance

— Buffered Programming:

— I/O voltage: 1.7 V - 2.0 V

— Standby current: 60 µA (typ) for 512-Mbit,

65 nm

— Deep Power-Down mode: 2 µA (typ)

— Automatic Power Savings mode

— 16-word synchronous-burst read current:

23 mA (typ) @ 108 MHz; 24 mA (typ) @

133 MHz

Software

— Numonyx™ Flash Data Integrator

(Numonyx™ FDI) optimized

— Basic Command Set and Extended

Command Set compatible

2.0 µs/Word (typ), 512-Mbit 65 nm;

Block Erase: 0.9 s per block (typ)

— 20 µs (typ) program/erase suspend

Architecture

— Common Flash Interface

— 16-bit wide data bus

— Multi-Level Cell Technology

Security

— OTP Registers:

— Symmetrically-Blocked Array Architecture

— 256-Kbyte Erase Blocks

64 unique pre-programmed bits

2112 user-programmable bits

— Absolute write protection with V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 1-Gbit device: Eight 128-Mbit partitions

— 512-Mbit device: Eight 64-Mbit partitions

— 256-Mbit device: Eight 32-Mbit partitions.

— 128-Mbit device: Eight 16-Mbit partitions.

— Read-While-Program and Read-While-Erase

— Status Register for partition/device status

— Blank Check feature

Density and Packaging

— Density: 128-, 256-, and 512-Mbit, and 1-

Gbit

— Address-data multiplexed and non-

multiplexed interfaces

— x16D (105-ball) Flash SCSP

— x16C (107-ball) Flash SCSP

— 0.8 mm pitch lead-free solder-ball

Quality and Reliability

— Expanded temperature: –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X Process Technology (65 nm)

— ETOX™ IX Process Technology (90 nm)

Order Number: 309823-11

April 2008

12 3 4 5 6 7...139

中文翻译

下载PDF

与PF48F4400P0R3Q0相关器件

型号	品牌	获取价格	描述	数据表
PF48F4400P0R3W0	NUMONYX	获取价格	StrataFlashÂ® Cellular Memory
PF48F4400P0RFC0	NUMONYX	获取价格	StrataFlashÂ® Cellular Memory
PF48F4400P0RFQ0	NUMONYX	获取价格	StrataFlashÂ® Cellular Memory
PF48F4400P0RFW0	NUMONYX	获取价格	StrataFlashÂ® Cellular Memory
PF48F4400P0TBQ0	INTEL	获取价格	Flash, 32MX16, 85ns, PBGA80, 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88/80
PF48F4400P0TBQ0A	NUMONYX	获取价格	Flash, 32MX16, 95ns, PBGA88
PF48F4400P0TBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
PF48F4400P0VBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
PF48F4400P0VBQ0	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
PF48F4400P0VBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory

与PF48F4400P0R3Q0相关文章

压敏电阻与气体放电管串联使用的专业解析
2024-07-01

2
手册解读：MMBT3904参数与管脚图及代换
2024-07-01

1
74LS298PC手册解读：参数说明、引脚说明、替代型号推荐
2024-07-01

2
L6234手册解读：引脚信息、电气参数
2024-07-01

1

产品中心

服务支持

精选活动

关于我们

帮助中心

PF48F4400P0R3Q0

PF48F4400P0R3Q0 数据手册

与PF48F4400P0R3Q0相关器件

与PF48F4400P0R3Q0相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PF48F4400P0R3Q0

PF48F4400P0R3Q0 数据手册

与PF48F4400P0R3Q0相关器件

与PF48F4400P0R3Q0相关文章

您还可以找

您在本页遇到什么问题？