Datasheet > PF48F4400M0Y0B0

PF48F4400M0Y0B0

更新时间： 2024-09-25 07:03:35

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存无线
页数	文件大小	规格书
90页	1199K
描述
Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO

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中文翻译

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数据手册

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PF48F4400M0Y0B0 数据手册

Numonyx™ Wireless Flash Memory (W18)

with AD Multiplexed IO

Datasheet

Product Features

High Performance Read-While-Write/Erase

— Burst frequency at 66 MHz

Security

— 128 bit Protection Register

— 64 Unique Bits Programmed by Numonyx

— 64 User-Programmable Bits

— Absolute Write Protection with V_PPat

Ground

— Individual and Instantaneous Block

Locking/Unlocking with Lock-Down

Capability

— 60 ns Initial Access Read Speed

— 11 ns Burst-Mode Read Speed

— 20 ns Page-Mode Read Speed

— 4-, 8-, 16-, and Continuous-Word Burst

Mode Reads

— Burst and Page Mode Reads in all Blocks,

across all partition boundaries

— Burst Suspend Feature

Software

— 5 µs (typ.) Program and Erase Suspend

Latency Time

— Enhanced Factory Programming at

3.1 µs/word (typ. for 0.13 µm)

— Numonyx™ Flash Data Integrator

(Numonyx™ FDI) and Common Flash

Interface Compatible

Architecture

— Multiple 4 Mbit Partitions

— Dual Operation: Read-while-Write and

Read-while-Erase

— 8 KB parameter blocks

— 64 KB main blocks

— Top or Bottom Parameter Configurations

— 16 bit wide data bus

— Programmable WAIT Signal Polarity

Quality and Reliability

— Temperature Range: –40 °C to +85 °C

— 100k Erase Cycles per Block

— 130 nm ETOX™ VIII Process

— 90 nm ETOX™ IX Process

—

— Multiplexed Address data bus

Power

Density and Package Ballout

— 130 nm: 32-, 64-, and 128-Mbit

— 90 nm: 32-, 64-Mbit

— V_CC= 1.70 V to 1.95 V

— V_CCQ= 1.70 V to 2.24 V or 1.35 V to 1.80 V

— Standby current (0.13 µm): 8 µA (typ.)

— Read current: 7 mA (typ.)

— 44-ball VF BGA

— 88-ball QUAD+

Order Number: 313272-06

November 2007

12 3 4 5 6 7...90

中文翻译

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