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PF48F4000P0ZTQ0 PDF预览

PF48F4000P0ZTQ0

更新时间： 2024-09-23 22:06:27
品牌 Logo 应用领域
英特尔 - INTEL 存储
页数 文件大小 规格书
102页 1616K
描述
Intel StrataFlash Embedded Memory

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中文翻译

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PF48F4000P0ZTQ0 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：BGA包装说明：8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88
针数：88Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.59最长访问时间：88 ns
其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE启动块：TOP
命令用户界面：YES通用闪存接口：YES
数据轮询：NOJESD-30 代码：R-PBGA-B88
长度：11 mm内存密度：268435456 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1部门数/规模：4,255
端子数量：88字数：16777216 words
字数代码：16000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX16封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装等效代码：BGA88,8X12,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
页面大小：4 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：1.8,1.8/3.3 V
编程电压：1.8 V认证状态：Not Qualified
座面最大高度：1 mm部门规模：16K,64K
最大待机电流：0.000005 A子类别：Flash Memories
最大压摆率：0.051 mA最大供电电压 (Vsup)：2 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40切换位：NO
类型：NOR TYPE宽度：8 mm

PF48F4000P0ZTQ0 数据手册

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®
Intel StrataFlash Embedded Memory  
(P30)  
1-Gbit P30 Family  
Datasheet  
Product Features  
■ High performance  
■ Security  
— One-Time Programmable Registers:  
— 85/88 ns initial access  
• 64 unique factory device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP bits  
— Selectable OTP Space in Main Array:  
• 4x32KB parameter blocks + 3x128KB main  
blocks (top or bottom configuration)  
— Absolute write protection: VPP = VSS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
— 40 MHz with zero wait states, 20 ns clock-to-  
data output synchronous-burst read mode  
— 25 ns asynchronous-page read mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— 1.8 V buffered programming at 7 µs/byte (Typ)  
■ Architecture  
— Multi-Level Cell Technology: Highest Density  
at Lowest Cost  
■ Software  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or  
bottom configuration  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
— Intel® Flash Data Integrator optimized  
— Basic Command Set and Extended Command  
Set compatible  
— 128-KByte main blocks  
■ Voltage and Power  
— VCC (core) voltage: 1.7 V – 2.0 V  
— VCCQ (I/O) voltage: 1.7 V – 3.6 V  
— Standby current: 55 µA (Typ) for 256-Mbit  
— 4-Word synchronous read current:  
13 mA (Typ) at 40 MHz  
— Common Flash Interface capable  
■ Density and Packaging  
— 64/128/256-Mbit densities in 56-Lead TSOP  
package  
— 64/128/256/512-Mbit densities in 64-Ball  
Intel® Easy BGA package  
— 64/128/256/512-Mbit and 1-Gbit densities in  
Intel® QUAD+ SCSP  
■ Quality and Reliability  
— Operating temperature: –40 °C to +85 °C  
• 1-Gbit in SCSP is –30 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology (130 nm)  
— 16-bit wide data bus  
The Intel StrataFlash® Embedded Memory (P30) product is the latest generation of Intel  
StrataFlash® memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device  
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.  
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR  
device, and support for code and data storage. Features include high-performance synchronous-  
burst read mode, fast asynchronous access times, low power, flexible security options, and three  
industry standard package choices.  
The P30 product family is manufactured using Intel® 130 nm ETOX™ VIII process technology.  
Order Number: 306666, Revision: 001  
April 2005  
1234567...102

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与PF48F4000P0ZTQ0相关器件

型号 品牌 获取价格 描述 数据表
PF48F4000P0ZTQ0A NUMONYX

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 		Flash, 16MX16, 88ns, PBGA88, 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88
PF48F4000P0ZTQ0A MICRON

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 		64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
PF48F4000P0ZTQ0B MICRON

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 		64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
PF48F4000P0ZTQEA NUMONYX

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 		Flash, 32MX16, PBGA88, 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88
PF48F4000P0ZTQED NUMONYX

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 		Flash, 32MX16, PBGA88, 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88
PF48F4000P0ZTQED MICRON

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 		1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage
PF48F4000P0ZTQEJ MICRON

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 		256Mb and 512Mb (256Mb/256Mb), P30-65nm
PF48F4040LVYTQ0 NUMONYX

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 		Flash, 32MX16, 88ns, PBGA88, 8 X 11 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88
PF48F4400L0ZDQ0 NUMONYX

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 		Flash Memory
PF48F4400M0Y0B0 NUMONYX

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 		Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO

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