Datasheet > PF48F4000P0ZBQEA

PF48F4000P0ZBQEA

更新时间： 2024-09-25 09:16:39

品牌	Logo	应用领域
恒忆 - NUMONYX		内存集成电路闪存
页数	文件大小	规格书
91页	983K
描述
Flash, 32MX16, PBGA88, 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88

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中文翻译

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数据手册

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PF48F4000P0ZBQEA 数据手册

Numonyx^TMStrataFlash^®Embedded Memory

(P30-65nm)

256-Mbit, 512-Mbit (256M/256M)

Datasheet

Product Features

High performance

Security

— 100 ns initial access for Easy BGA

— 110 ns initial access for TSOP

— 25 ns 16-word asynchronous-page read mode

— 52 MHz with zero WAIT states, 17ns clock-to-

data output synchronous-burst read mode

— 4-, 8-, 16-, and continuous-word options for

burst mode

— One-Time Programmable Register:

• 64 unique factory device identifier bits

• 2112 user-programmable OTP bits

— Absolute write protection: V = V

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— Buffered Enhanced Factory Programming

(BEFP) at 2.0 MByte/s (Typ) using 512-word

buffer

— Password Access feature

Software

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Numonyx™ Flash Data Integrator optimized

— Basic Command Set and Extended Function

Interface (EFI) Command Set compatible

— Common Flash Interface capable

— 1.8 V buffered programming at 1.5MByte/s

(Typ) using 512-word buffer

Architecture

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

Density and Packaging

— 56-Lead TSOP package (256-Mbit only)

— 64-Ball Easy BGA package (256, 512-Mbit)

— Numonyx™ QUAD+ SCSP (256, 512-Mbit)

— 16-bit wide data bus

— 128-KByte main blocks

— Blank Check to verify an erased block

Voltage and Power

Quality and Reliability

— V (core) voltage: 1.7 V – 2.0 V

CCQ

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X process technology

— V

(I/O) voltage: 1.7 V – 3.6 V

— Standby current: 65 µA (Typ) for 256-Mbit;

— 52 MHz continuos synchronous read current:

21mA (Typ)/24mA(Max)

Datasheet

Apr 2009

Order Number: 320002-08

12 3 4 5 6 7...91

中文翻译

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与PF48F4000P0ZBQEA相关器件

型号	品牌	获取价格	描述	数据表
PF48F4000P0ZBQEF	MICRON	获取价格	256Mb and 512Mb (256Mb/256Mb), P30-65nm
PF48F4000P0ZBTQE	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
PF48F4000P0ZTQ0	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
PF48F4000P0ZTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
PF48F4000P0ZTQ0A	NUMONYX	获取价格	Flash, 16MX16, 88ns, PBGA88, 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88
PF48F4000P0ZTQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
PF48F4000P0ZTQ0B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
PF48F4000P0ZTQEA	NUMONYX	获取价格	Flash, 32MX16, PBGA88, 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88
PF48F4000P0ZTQED	NUMONYX	获取价格	Flash, 32MX16, PBGA88, 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, SCSP-88
PF48F4000P0ZTQED	MICRON	获取价格	1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage

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