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PF38F6040M0Y1C0 PDF预览

PF38F6040M0Y1C0

更新时间： 2024-11-09 20:11:35
品牌 Logo 应用领域
英特尔 - INTEL 静态存储器内存集成电路
页数 文件大小 规格书
68页 1704K
描述
Memory Circuit, Flash+SRAM, PBGA107

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中文翻译

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PF38F6040M0Y1C0 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FBGA, BGA107,10X12,32Reach Compliance Code：unknown
风险等级：5.84最长访问时间：96 ns
JESD-30 代码：R-PBGA-B107内存集成电路类型：MEMORY CIRCUIT
混合内存类型：FLASH+SRAM端子数量：107
封装主体材料：PLASTIC/EPOXY封装代码：FBGA
封装等效代码：BGA107,10X12,32封装形状：RECTANGULAR
封装形式：GRID ARRAY, FINE PITCH电源：1.8 V
认证状态：Not Qualified最大待机电流：0.000185 A
子类别：Other Memory ICs标称供电电压 (Vsup)：1.8 V
表面贴装：YES端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
Base Number Matches：1

PF38F6040M0Y1C0 数据手册

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®
Intel StrataFlash Cellular Memory (M18)  
Datasheet  
Product Features  
„ High-Performance Read, Program and Erase  
„ Power  
— Core voltage: 1.7 V - 2.0 V  
— 96 ns initial read access  
— 108 MHz with zero wait-state synchronous  
burst reads: 7 ns clock-to-data output  
— 133 MHz with zero wait-state synchronous  
burst reads: 5.5 ns clock-to-data output  
— 8-, 16-, and continuous-word  
synchronous-burst Reads  
— Programmable WAIT configuration  
— Customer-configurable output driver  
impedance  
— Buffered Programming:  
— I/O voltage: 1.7 V - 2.0 V  
— Standby current: 60 µA (typ) for 512-Mbit,  
65 nm  
— Deep Power-Down mode: 2 µA (typ)  
— Automatic Power Savings mode  
— 16-word synchronous-burst read current:  
23 mA (typ) @ 108 MHz; 24 mA (typ) @  
133 MHz  
„ Software  
— Intel® Flash Data Integrator (Intel® FDI)  
optimized  
2.0 µs/Word (typ), 512-Mbit 65 nm;  
Block Erase: 0.9 s per block (typ)  
— 20 µs (typ) program/erase suspend  
„ Architecture  
— Basic Command Set and Extended  
Command Set compatible  
— Common Flash Interface  
— 16-bit wide data bus  
— Multi-Level Cell Technology  
„ Security  
— OTP Registers:  
— Symmetrically-Blocked Array Architecture  
— 256-Kbyte Erase Blocks  
64 unique pre-programmed bits  
2112 user-programmable bits  
— Absolute write protection with VPP = GND  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
— 1-Gbit device: Eight 128-Mbit partitions  
— 512-Mbit device: Eight 64-Mbit partitions  
— 256-Mbit device: Eight 32-Mbit partitions.  
— 128-Mbit device: Eight 16-Mbit partitions.  
— Read-While-Program and Read-While-Erase  
— Status Register for partition/device status  
— Blank Check feature  
„ Density and Packaging  
— Density: 128-, 256-, and 512-Mbit, and 1-  
Gbit  
— Address-data multiplexed and non-  
multiplexed interfaces  
— x16D (105-ball) Flash SCSP  
— x16C (107-ball) Flash SCSP  
— 0.8 mm pitch lead-free solder-ball  
„ Quality and Reliability  
— Expanded temperature: –30 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ X Process Technology (65 nm)  
— ETOX™ IX Process Technology (90 nm)  
Document Number: 309823-009US  
July 2007  
1234567...68

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