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PF38F5070MWR0B PDF预览

PF38F5070MWR0B

更新时间: 2024-11-05 06:00:19
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存无线
页数 文件大小 规格书
102页 1372K
描述
Numonyx Wireless Flash Memory (W18)

PF38F5070MWR0B 数据手册

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Numonyx™ Wireless Flash Memory (W18)  
Datasheet  
Product Features  
„ High Performance Read-While-Write/Erase  
„ Architecture  
— Burst frequency at 66 MHz  
(zero wait states)  
— 60 ns Initial access read speed  
— 11 ns Burst mode read speed  
— 20 ns Page mode read speed  
— Multiple 4-Mbit partitions  
— Dual Operation: RWW or RWE  
— Parameter block size = 4-Kword  
— Main block size = 32-Kword  
Top or bottom parameter devices  
— 16-bit wide data bus  
— 4-, 8-, 16-, and Continuous-Word Burst  
mode reads  
„ Software  
— Burst and Page mode reads in all Blocks,  
across all partition boundaries  
— Burst Suspend feature  
— Enhanced Factory Programming at 3.1 µs/  
word  
— 5 µs (typ.) Program and Erase Suspend  
latency time  
— Flash Data Integrator (FDI) and Common  
Flash Interface (CFI) Compatible  
— Programmable WAIT signal polarity  
„ Packaging and Power  
„ Security  
— 128-Bit OTP Protection Register:  
64 unique pre-programmed bits +  
64 user-programmable bits  
— Absolute Write Protection with VPP at ground  
— Individual and Instantaneous Block Locking/  
Unlocking with Lock-Down Capability  
— 90 nm: 32- and 64-Mbit in VF BGA  
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA  
— 130 nm: 128-Mbit in QUAD+ package  
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch  
— VCC = 1.70 V to 1.95 V  
— VCCQ (90 nm) = 1.7 V to 1.95 V  
„ Quality and Reliability  
— VCCQ (130 nm) = 1.7 V to 2.24 V or 1.35 V  
to 1.80 V  
— VCCQ (130 nm) = 1.35 V to 2.24 V  
— Standby current (130 nm): 8 µA (typ.)  
— Read current: 8 mA (4-word burst, typ.)  
Temperature Range: –40 °C to +85 °C  
— 100K Erase Cycles per Block  
— 90 nm ETOX™ IX Process  
— 130 nm ETOX™ VIII Process  
Order Number: 290701-18  
November 2007  

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