是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | BGA | 包装说明: | TFBGA, BGA105,9X12,32 |
针数: | 105 | Reach Compliance Code: | unknown |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.29 |
最长访问时间: | 96 ns | 其他特性: | PSEUDO SRAM IS ORGANIZED AS 16M X 16 |
JESD-30 代码: | R-PBGA-B105 | JESD-609代码: | e1 |
长度: | 11 mm | 内存密度: | 536870912 bit |
内存集成电路类型: | MEMORY CIRCUIT | 内存宽度: | 16 |
混合内存类型: | FLASH+PSRAM | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 105 |
字数: | 33554432 words | 字数代码: | 32000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 组织: | 32MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装等效代码: | BGA105,9X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 260 |
电源: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.00016 A |
子类别: | Other Memory ICs | 最大供电电压 (Vsup): | 2 V |
最小供电电压 (Vsup): | 1.7 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | TIN SILVER COPPER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PF38F5070M0Y0C0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |
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PF38F5070M0Y0Q0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |
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PF38F5070M0Y0T0 | NUMONYX |
获取价格 |
Numonyx StrataFlash Wireless Memory |
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PF38F5070M0Y0V0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |
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PF38F5070M0Y0W0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |
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PF38F5070M0Y1B0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |
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PF38F5070M0Y1C0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |
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PF38F5070M0Y1CE | INTEL |
获取价格 |
Memory Circuit, Flash+PSRAM, Hybrid, PBGA105 |
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PF38F5070M0Y1Q0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |
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PF38F5070M0Y1V0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |
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