Datasheet > PF08107BP

PF08107BP

更新时间： 2024-09-18 20:30:07

品牌	Logo	应用领域
日立 - HITACHI		高功率电源射频微波
页数	文件大小	规格书
19页	67K
描述
Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, RF-K-8, 10 PIN

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

PF08107BP 数据手册

PF08107BP

MOS FET Power Amplifier Module

for E-GSM and DCS1800 Dual Band Handy Phone

ADE-208-1399B (Z)

3rd Edition

Feb. 2001

Application

•

Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz).

For 3.5 V nominal operation

Features

•

2 in / 2 out dual band amplifier

Simple external circuit including output matching circuit

One power control pin with one band switch

High gain 3stage amplifier : 0 dBm input Typ

Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ

High efficiency : 46 % Typ at 35.0 dBm for E-GSM

40 % Typ at 32.0 dBm for DCS1800

Pin Arrangement

• RF-K-8

1: Pin _GSM

2: Vapc

3: Vdd1

4: Pout _GSM

5: Pout _DCS

6: Vdd2

7: Vctl

8: Pin _DCS

G: GND

12 3 4 5 6 7...19

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
PF08109B	RENESAS	获取价格	MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
PF08109B-TB	ETC	获取价格	Microwave/Millimeter Wave Amplifier
PF08114B	ETC	获取价格
PF08122B	ETC	获取价格
PF08123B	ETC	获取价格
PF08127B	RENESAS	获取价格	MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
PF08127B-TB	RENESAS	获取价格	暂无描述
PF08134B	RENESAS	获取价格	MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
PF083A	OMRON	获取价格	General-purpose Relays and Power Relays Sockets
PF083A-D	OMRON	获取价格	Relay Socket,