Datasheet > PF08107B

PF08107B

更新时间： 2024-09-18 20:22:55

品牌	Logo	应用领域
瑞萨 - RENESAS		高功率电源放大器射频微波功率放大器
页数	文件大小	规格书
44页	189K
描述
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, RF-K-8, 10 PIN

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PF08107B 技术参数

PF08107B

MOS FET Power Amplifier Module

for E-GSM and DCS1800 Dual Band Handy Phone

ADE-208-787F (Z)

7th Edition

Feb. 2001

Application

•

Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz).

For 3.5 V nominal operation

Features

•

2 in / 2 out dual band amplifier

Simple external circuit including output matching circuit

One power control pin with one band switch

High gain 3stage amplifier : 0 dBm input Typ

Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ

High efficiency : 50 % Typ at 35.0 dBm for E-GSM

43 % Typ at 32.0 dBm for DCS1800

Pin Arrangement

• RF-K-8

1: Pin _GSM

2: Vapc

3: Vdd1

4: Pout _GSM

5: Pout _DCS

6: Vdd2

7: Vctl

8: Pin _DCS

G: GND

12 3 4 5 6 7...44

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