Datasheet > PESDHC3D12VU

PESDHC3D12VU

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
5页	327K
描述
反向截止电压（Vrwm）:12V;极性/通道数（Channel）:1-Line，Unidirectional;击穿电压（VBR):13.5V;峰值脉冲电流(Ipp):5A;最大钳位电压(Vc):19V;电容（Cj）:100pF

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PESDHC3D12VU 数据手册

UMW

PESDHC3D12VU

Description

The PESDHC3D12VU ESD protector is designed to

replace multilayer varistors (MLVs) in portable

applications such as cell phones, notebook computers,

and PDA’s. They feature large cross-sectional area

junctions for conducting high transient currents, offer

desirable electrical characteristics for board level

protection, such as fast response time, lower

operating voltage, lower clamping voltage and no

device degradation when compared to MLVs. The

PESDHC3D12VU protects sensitive semiconductor

components from damage or upset due to electrostatic

discharge (ESD) and other voltage induced transient

events. The PESDHC3D12VU is available in a SOD-

323 package with working voltages of 12 volt.

Feature

Applications

Cell phone handsets and accessories

Personal digital assistants (PDA’s)

Notebooks, desktops, and servers

Portable instrumentation

Cordless phones

●

500W peak pulse power per line (t_P= 8/20μs)

Replacement for MLV(0805)

Unidirectional configurations

Response Time is Typically < 1 ns

Protect one I/O or power line

Low clamping voltage

Digital cameras

Peripherals

MP3 players

Mechanical Characteristics

Lead finish:100% matte Sn(Tin) Mounting

position: Any

●

Qualified max reflow temperature:260℃

Pure tin plating: 7 ~ 17 um

Pin flatness:≤3mil

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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