Datasheet > PESD5V5C1BBSF

PESD5V5C1BBSF

更新时间： 2024-04-09 18:59:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	148K
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PESD5V5C1BBSF 数据手册

PESD5V5C1BBSF

Extremely low capacitance bidirectional ESD protection

diode

19 January 2024

Short data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the

TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small

Surface-Mounted Device (SMD) package designed to protect one signal line from the damage

caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

V_RWM= 5.5 V device

IEC 61000-4-5 (surge): I_PP= 10 A peak pulse (average measured)

IEC 61000-4-4 robust up to 56 A into a 50 Ohm termination (2.8 kV)

Extremely low diode capacitance C_d= 0.26 pF typical

Very high pass-band: 23.6 GHz in a 50 Ohm system

Extremely low clamping voltage to protect sensitive I/Os

Very low peak clamping for sensitive IC with low-inductance traces between protection and

protected system

•

Extremely low-inductance protection path to ground

ESD protection up to ±15 kV according to IEC 61000-4-2

Very low trigger voltage V_t1= 7.9 V to protect against low-voltage surge pulses

Ultra-small SMD package

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

USB3.2 and HDMI2.0 data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-5.5

5.5

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.26

0.31

12 3 4 5 6 7

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