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PESD5V0L1BSF-315 PDF预览

PESD5V0L1BSF-315

更新时间: 2024-09-20 15:47:47
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管电视
页数 文件大小 规格书
13页 153K
描述
DIODE 35 W, BIDIRECTIONAL, SILICON, TVS DIODE, 0.60 X 0.30 MM, 0.30 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, ULTRA SMALL PACKAGE-2, Transient Suppressor

PESD5V0L1BSF-315 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:R-PBCC-N2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.65
最大击穿电压:10 V最小击穿电压:6 V
击穿电压标称值:8 V最大钳位电压:13.5 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PBCC-N2
最大非重复峰值反向功率耗散:35 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:5 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

PESD5V0L1BSF-315 数据手册

 浏览型号PESD5V0L1BSF-315的Datasheet PDF文件第2页浏览型号PESD5V0L1BSF-315的Datasheet PDF文件第3页浏览型号PESD5V0L1BSF-315的Datasheet PDF文件第4页浏览型号PESD5V0L1BSF-315的Datasheet PDF文件第5页浏览型号PESD5V0L1BSF-315的Datasheet PDF文件第6页浏览型号PESD5V0L1BSF-315的Datasheet PDF文件第7页 
PESD5V0L1BSF  
Ultra low profile bidirectional low capacitance  
ESD protection diode  
Rev. 1 — 18 February 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a  
SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to  
protect one signal line from the damage caused by ESD and other transients.  
1.2 Features and benefits  
„ Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen  
and antimony (Dark Green compliant)  
„ Bidirectional ESD protection of one line  
„ Low diode capacitance Cd = 12 pF  
„ ESD protection up to ±30 kV according to IEC 61000-4-2  
„ Ultra small SMD package  
„ Symmetrical breakdown voltage  
1.3 Applications  
„ Cellular handsets and accessories  
„ Portable electronics  
„ Communication systems  
„ Computers and peripherals  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
5  
9
Typ  
-
Max  
5
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
[1]  
f = 1 MHz; VR = 0 V  
12  
15.4  
pF  
[1] This parameter is guaranteed by design.  

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