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PE642DT PDF预览

PE642DT

更新时间: 2024-09-19 17:15:51
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
7页 335K
描述
PDFN 3x3

PE642DT 数据手册

 浏览型号PE642DT的Datasheet PDF文件第2页浏览型号PE642DT的Datasheet PDF文件第3页浏览型号PE642DT的Datasheet PDF文件第4页浏览型号PE642DT的Datasheet PDF文件第5页浏览型号PE642DT的Datasheet PDF文件第6页浏览型号PE642DT的Datasheet PDF文件第7页 
Dual N-Channel Enhancement Mode  
Field Effect Transistor  
PE642DT  
NIKO-SEM  
PDFN 3x3S  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
RDS(ON)  
9mΩ  
ID  
1 : G1  
Q2  
Q1  
30V  
30V  
34A  
31A  
2,3,4 : D1  
5,6,7 : S2  
8 : G2  
10.5mΩ  
9 : S1/D2  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
Q2  
30  
±20  
34  
22  
48  
11  
8.8  
21  
22  
20  
8
Q1  
30  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±20  
31  
TC = 25 °C  
Continuous Drain Current3  
Pulsed Drain Current1  
Continuous Drain Current3  
ID  
IDM  
ID  
TC = 100 °C  
20  
46  
TA = 25 °C  
TA = 70 °C  
9.7  
7.7  
18.3  
16.7  
19  
A
Avalanche Current  
Avalanche Energy  
IAS  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
mJ  
W
Power Dissipation  
Power Dissipation  
PD  
7.6  
1.7  
1.1  
2
PD  
W
1.2  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
TYPICAL  
MAXIMUM  
UNITS  
Q2  
Q1  
Q2  
Q1  
62  
70  
RJA  
RJA  
RJC  
RJC  
Junction-to-Ambient2  
°C / W  
6.2  
6.5  
Junction-to-Case  
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25°C. The value in any given application depends on the user's specific board design.  
3Package limitation current is Q2=14A , Q1=9.5A.  
E-48-3  
REV 1.0  
1

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