Datasheet > PE614DX

PE614DX

更新时间： 2024-10-31 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	349K
描述
PDFN 3x3

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中文翻译

获取价格

数据手册

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PE614DX 数据手册

PE614DX

Dual N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

PDFN 3x3P

Halogen-Free & Lead-Free

D1 D1 D2 D2

PRODUCT SUMMARY

V_(BR)DSS

20V

R_DS(ON)

I_D

G : GATE

D : DRAIN

S : SOURCE

30A

12.5mΩ

S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

V_GS

±10

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Curren³

I_D

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

HBM

E_AS

17.8

Power Dissipation

P_D

2.5

1.6

ESD Class

2kV

-55 to 150

Operating Junction & Storage Temperature Range

T_j, T_stg

°C

THERMAL RESISTANCE RATING

THERMAL RESISTANCE

Junction-to-Ambient²

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

R_JA

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25° C.

³Package limitation current is 7A.

E-26-2

REV1.1

12 3 4

中文翻译

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