Datasheet > PE5A1BA

PE5A1BA

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	266K
描述
PDFN 3x3

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中文翻译

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数据手册

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PE5A1BA 数据手册

P-Channel Logic Level Enhancement Mode

Field Effect Transistor

PE5A1BA

NIKO-SEM

PDFN 3x3P

Halogen-free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-20V

R_DS(ON)

I_D

6.5mΩ

-43A

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

G. GATE

D. DRAIN

S. SOURCE

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

100% UIS Tested

100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

-20

UNITS

V_DS

V_GS

Gate-Source Voltage

±8

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

-43

-27

I_D

Continuous Drain Current⁴

-18

-14

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

-50

-39

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

Power Dissipation³

P_D

3.5

2.2

Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

REV 1.0

F-39-3

12 3 4 5

中文翻译

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