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PE55F40 PDF预览

PE55F40

更新时间: 2024-11-19 22:18:07
品牌 Logo 应用领域
SANREX 栅极触发装置可控硅整流器
页数 文件大小 规格书
2页 122K
描述
THYRISTOR MODULE

PE55F40 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.73
最大直流栅极触发电流:70 mA最大直流栅极触发电压:3 V
快速连接描述:0螺丝端子的描述:0
最大维持电流:50 mA最大漏电流:15 mA
通态非重复峰值电流:1800 A最大通态电压:1.4 V
最大通态电流:55000 A最高工作温度:125 °C
最低工作温度:-40 °C重复峰值反向电压:400 V
子类别:Silicon Controlled RectifiersBase Number Matches:1

PE55F40 数据手册

 浏览型号PE55F40的Datasheet PDF文件第2页 
THYRISTOR MODULE  
(
)
PD,PE,KK  
PK  
55F  
UL:E76102M)  
Power Thyristor/Diode Module PK55F series are designed for various rectifier circuits  
and power controls. For your circuit application. following internal connections and wide  
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package  
and electrically isolated mounting base make your mechanical design easy.  
92  
20  
17.5  
20  
20  
2-  
6
T(AV)  
I
T(RMS)  
55A, I  
TSM  
86A, I  
1750A  
di/dt 150 A/μs  
dv/dt 500V/μs  
2.8  
M5X10  
K2  
G2  
K2  
G2  
#110TAB  
3
2
1
Applications)  
K1G1  
(A2)�  
(K2)�  
3
2
1
A1K2  
K1  
(K2)�  
(A2)�  
A1K2  
Various rectifiers  
PK  
PE  
AC/DC motor drives  
Heater controls  
Light dimmers  
80±0.2  
K2  
2
K2  
G2  
3
2
1
1
1
K1G1  
(A2)�  
(K2)�  
K1G1  
(A2)�  
A1K2  
(A1)�  
Static switches  
PD  
KK  
Unit:  
A
Maximum Ratings  
Ratings  
PK55F40  
PD55F40  
PE55F40  
KK55F40  
PK55F80  
PD55F80  
PE55F80  
KK55F80  
PK55F120  
PD55F120  
PE55F120  
PK55F160  
PD55F160  
PE55F160  
KK55F160  
Symbol  
Item  
Unit  
KK55F120  
VRRM  
VRSM  
VDRM  
400  
480  
400  
800  
960  
800  
1200  
1300  
1200  
1600  
1700  
1600  
V
V
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Off-State Voltage  
Symbol  
TAV)  
I
Item  
Conditions  
Ratings  
55  
Unit  
A
Average On-State Current  
R.M.S. On-State Current  
Surge On-State Current  
Single phase, half wave, 180°conduction, Tc89℃  
Single phase, half wave, 180°conduction, Tc89℃  
cycle, 50Hz/60Hz, peak Value, non-repetitive  
Value for one cycle of surge current  
TRMS)  
I
86  
A
1
TSM  
I
A
1600 1750  
/
2
2
2
2
I t  
12800  
A S  
I t  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
10  
W
W
A
GAV)  
P
3
FGM  
I
3
10  
FGM  
V
Peak Gate Voltage (Forward)  
Peak Gate Voltage (Reverse)  
Critical Rate of Rise of On-State Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
150  
didt  
I 100mATj25V =  
V
dI dt0.1A μs  
A μs  
/
/
/
2
ISO  
V
A.C.1minute  
2500  
V
Isolation Breakdown Voltage (R.M.S.)  
Operating Junction Temperature  
Tj  
40 to 125  
40 to 125  
2.728)  
2.728)  
170  
Tstg  
Storage Temperature  
MountingM5Recommended Value 1.5-2.515-25)  
TerminalM5Recommended Value 1.5-2.515-25)  
Mounting  
Torque  
N・m  
(㎏fB)  
g
Mass  
Electrical Characteristics  
Symbol  
DRM  
I
Item  
Conditions  
at V , single phase, half wave, Tj125℃  
Ratings  
15  
Unit  
mA  
mA  
V
Repetitive Peak Off-State Current, max.  
Repetitive Peak Reverse Current, max.  
Peak On-State Voltage, max.  
Gate Trigger Current/Voltage, max.  
Non-Trigger Gate, Voltage. min.  
Turn On Time, max.  
DRM  
RRM  
I
DRM  
15  
at V , single phase, half wave, Tj125℃  
TM  
V
1.40  
On-State Current 170A, Tj25Inst. measurement  
GT  
GT  
T
D
I V  
Tj25℃,I 1AV 6V  
70 3  
mA V  
/
/
1
GD  
V
D
DRM  
0.25  
10  
V
Tj125℃,V =/V  
I 55AI 100mATj25V =  
Tj125, V =/V , Exponential wave.  
2
1
tgt  
T
G
D
DRM  
G
V
dI dt0.1A μs  
μs  
/
/
2
2
Critical Rate of Rise of Off-State Voltage, min.  
Holding Current, typ.  
D
DRM  
500  
50  
dvdt  
V μs  
/
3
H
I
mA  
mA  
Tj25℃  
Tj25℃  
Junction to case  
L
I
Lutching Current, typ.  
100  
0.5  
Rthj-c)*Thermal Impedance, max.  
W  
/
markThyristor and Diode part. No markThyristor part  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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