Datasheet > PE534SA

PE534SA

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	312K
描述
PDFN 3x3

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中文翻译

获取价格

数据手册

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PE534SA 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PE534SA

PDFN 3x3P

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

52A

7.5mΩ

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

UNITS

V_DS

V_GS

Gate-Source Voltage

±20

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current³

I_D

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

100

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

Power Dissipation

P_D

2.5

1.6

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

Junction-to-case

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C／W

R_JA

3.5

R_JC

¹Pulse width limited by maximum junction temperature.

²The value of R_JAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C. The value in any given application depends on the user's specific board design

³Package limitation current is 26A

F-5-1

REV1.0

12 3 4

中文翻译

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