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PE521BA PDF预览

PE521BA

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
4页 239K
描述
PDFN 3x3

PE521BA 数据手册

 浏览型号PE521BA的Datasheet PDF文件第2页浏览型号PE521BA的Datasheet PDF文件第3页浏览型号PE521BA的Datasheet PDF文件第4页 
P-Channel Logic Level Enhancement Mode  
Field Effect Transistor  
PE521BA  
NIKO-SEM  
PDFN 3x3P  
Halogen-Free & Lead-Free  
D
PRODUCT SUMMARY  
D
S
D
S
D
S
D
G
V(BR)DSS  
-20V  
RDS(ON)  
ID  
G
G : GATE  
D : DRAIN  
S : SOURCE  
-23A  
20mΩ  
#1  
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
UNITS  
-20  
±8  
V
V
Gate-Source Voltage  
VGS  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
-23  
-18  
Continuous Drain Current3  
ID  
-7  
A
-6  
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
-60  
-20  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
20  
mJ  
W
17.8  
11.4  
1.8  
Power Dissipation  
PD  
1.2  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJA  
TYPICAL MAXIMUM UNITS  
Junction-to-Ambient2  
68  
°C / W  
7
Junction-to-Case  
RJC  
1Pulse width limited by maximum junction temperature.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25° C. The value in any given application depends on the user's specific board design.  
3Package limitation current is -11A.  
G-02-3  
REV 1.0  
1

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