THYRISTOR MODULE
(
)
PD,PE,KK
PK
130F
UL:E76102（M）
Power Thyristor/Diode Module PK130F series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. Two elements in a package and electrically
isolated mounting base make your mechanical design easy.
92
26
12
26
7
4-φ6（M5）�
●
T(AV)
I
T(RMS)
130A, I
TSM
205A, I
4400A
● di/dt 200 A/μs
● dv/dt 500V/μs
18
2
R8.0
K2
G2
K2
G2
M8×14
3
2
1
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
K1G1
（A2）�
♯110TAB
（2.8.0.5T）�
（K2）�
3
2
1
A1K2
K1
（K2）�
（A2）�
A1K2
PK
PE
K2
2
K2
G2
3
2
1
1
1
K1G1
（A2）�
（K2）�
K1G1
（A2）�
A1K2
（A1）�
80±0.3
Static switches
PD
KK
Unit：
A
■Maximum Ratings
Ratings
PK130F120
PK130F40
PD130F40
PE130F40
KK130F40
PK130F80
PD130F80
PE130F80
KK130F80
PK130F160
PD130F160
PE130F160
KK130F160
Symbol
Item
Unit
PD130F120
PE130F120
KK130F120
RRM
V
400
480
400
800
960
800
1200
1300
1200
1600
1700
1600
V
V
V
＊
＊
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
RSM
V
DRM
V
Symbol
T（AV）
I
Item
Conditions
Ratings
130
Unit
A
＊Average On-State Current
＊R.M.S. On-State Current
＊Surge On-State Current
Single phase, half wave, 180°conduction, Tc：90℃
Single phase, half wave, 180°conduction, Tc：90℃
／cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
T（RMS）
I
205
A
1
TSM
I
A
4000 4400
/
2
2
2
2
I t
A S
＊I t
8×104
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
A
G（AV）
P
3
FGM
I
3
10
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
V
RGM
V
5
V
1
G
D
DRM
G
200
di／dt
I ＝100mA，Tj＝25℃，V ＝
／
2V ，dI dt＝0.1A μs
A μs
/
/
/
ISO
V
A.C.1minute
2500
V
℃
℃
＊
＊
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Tj
－40 to ＋125
－40 to ＋125
2.7（28）
11（115）
510
Tstg
＊Storage Temperature
Mounting（M5） Recommended 1.5-2.5（15-25）
Terminal（M8） Recommended 8.8-10（90-105）
Mounting
Torque
N･ｍ
（㎏f･B）
g
Mass
■Electrical Characteristics
Symbol
DRM
I
Item
Conditions
at V , single phase, half wave, Tj＝125℃
at V , single phase, half wave, Tj＝125℃
On-State Current 400A, Tj＝25℃ Inst. measurement
Ratings
50
Unit
mA
mA
V
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
DRM
DRM
RRM
I
50
＊
＊
TM
V
1.40
GT
GT
T
D
I ／V
Tj＝25℃，I ＝1A，V ＝6V
100 3
mA V
/
/
1
GD
V
D
DRM
0.25
10
V
Tj＝125℃，V ＝／V
2
1
tgt
T
G
D
DRM
G
I ＝130A，I ＝100mA，Tj＝25℃，V ＝
／
2V ，dI dt＝0.1A μs
μs
/
/
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
500
50
dv／dt
Tj＝125℃, V ＝／V , Exponential wave.
V μs
/
3
H
I
mA
mA
Tj＝25℃
Tj＝25℃
Junction to case
L
I
Lutching Current, typ.
100
0.2
Rth（j-c）＊Thermal Impedance, max.
℃ W
/
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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