THYRISTOR MODULE
(
)
PD,PE
PK 110FG
UL;E76102(M)
Power Thyristor/Diode Module PK110FG series are designed for various rectifier
circuits and power controls. For your circuit application, following internal connections
and wide voltage ratings up to 1600V are available. and electrically isolated mounting
base make your mechanical design easy.
92.0�
20.0�20.0�20.0�
17.5�
2-φ6 .0�
●
●
T(AV)
T(RMS)
TSM
172A, I
I
110A, I
3000A
di/dt 100A/μs
Internal Configurations
● dv/dt 1000V/μs
M5× 10�
2.8�
K2
G2
4-#110TAB
(Applications)
Various rectifiers
K2
G2
3
2
1
K1G1
(A2)�
(K2)�
3
2
1
A1K2
K1
(A2)�
(K2)�
A1K2
NAME PLATE
AC/DC motor drives
Heater controls
Light dimmers
PK
PE
80.0±0.2�
K2
3
2
1
K1G1
(A2)�
(K2)�
A1K2
Static switches
Unit:
A
PD
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
PK110FG40
PD110FG40
PE110FG40
PK110FG80
PD110FG80
PE110FG80
PK110FG120
PD110FG120
PE110FG120
PK110FG160
PD110FG160
PE110FG160
Ratings
Symbol
Item
VRRM
VRSM
VDRM
400
480
400
800
960
800
1200
1300
1200
1600
1700
1600
V
V
V
*Repetitive Peak Reverse Voltage
*Non-Repetitive Peak Reverse Voltage
*Repetitive Peak off-state Voltage
Ratings
Symbol
Item
Conditions
Unit
A
T(AV)
I
110
*Average On-state Current
*R.M.S. On-state Current
*Surge On-state Current
Single phase, half wave, 180°conduction, Tc=81℃
T(RMS)
I
172
A
Single phase, half wave, 180°conduction, Tc=81℃
1
TSM
I
Z
A
/ Cycle, 50/60H , Peak Value, non-repetitive
2740/3000
2
2
2
2
I t
Value for one cycle surge current
37500
A S
*I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
G(AV)
P
1
FGM
I
3
10
A
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
V
RGM
V
5
V
1
G
D
DRM
G
100
di/dt
I =100mA,V =/V ,di /dt=0.1A/μs
A/μs
V
2
ISO
V
A.C. 1minute
2500
*Isolation Breakdown Voltage(R.M.S.)
Tj
*
Operating Junction Temperature
-40 to +125
-40 to +125
2.7(28)
2.7(28)
170
℃
℃
Tstg
*Storage Temperature
Mounting(M5) Recommended Value 1.5-2.5(15-25)
Mounting
Torque
N・m
(㎏f・B)
Termina
(l M5) Recommended Value 1.5-2.5(15-25)
Mass
Typical Value
g
■Electrical Characteristics
Ratings
30
Symbol
Item
Conditions
Unit
mA
mA
V
DRM
I
Repetitive Peak off-state Current,max
Repetitive Peak Reverse Current,max
D
DRM
Tj=125℃,V =V
RRM
I
D
DRM
30
*
Tj=125℃,V =V
TM
V
T
1.6
*On-state Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Non-Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
I =330A
GT
I
D
T
50
mA
V
V =6V,I =1A
GT
V
D
T
3
V =6V,I =1A
1
GD
V
D
DRM
0.25
1000
0.25
V
Tj=125℃,V =
/
2V
2
D
DRM
dv/dt
Tj=125℃,V =/V
V/μs
℃/W
3
Junction to case
Rth(j-c)*Thermal Impedance,max
*mark:Thyristor and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com