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PDZ8.2B PDF预览

PDZ8.2B

更新时间: 2024-11-20 10:14:47
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管
页数 文件大小 规格书
4页 112K
描述
SURFACE MOUNT SILICON ZENER DIODES

PDZ8.2B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.72配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.4 W认证状态:Not Qualified
标称参考电压:8.2 V表面贴装:YES
技术:ZENER端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2.08%Base Number Matches:1

PDZ8.2B 数据手册

 浏览型号PDZ8.2B的Datasheet PDF文件第2页浏览型号PDZ8.2B的Datasheet PDF文件第3页浏览型号PDZ8.2B的Datasheet PDF文件第4页 
PDZ4.7B ~ PDZ36B  
SURFACE MOUNT SILICON ZENER DIODES  
POWER  
400 mWatts  
VOLTAGE  
4.7 to 36 Volts  
FEATURES  
0.078(1.95)  
0.068(1.75)  
• Planar Die construction  
• 400mW Power Dissipation  
• Ideally Suited for Automated Assembly Processes  
• In compliance with EU RoHS 2002/95/EC directives  
0.014(0.35)  
0.054(1.35)  
0.045(1.15)  
0.009(0.25)  
0.038(0.95)  
0.027(0.70)  
MECHANICAL DATA  
• Case: SOD-323, Molded Plastic  
0.006(0.15)  
0.002(0.05)  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Polarity: See Diagram Below  
0.107(2.7)  
0.090(2.3)  
• Weight: 0.0001 ounce, 0.0041 gram  
• Mounting Position: Any  
0.012(0.30)MIN.  
1
2
Cathode  
Anode  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
PD  
LIMITS  
400  
UNIT  
Maximum Power Dissipation (Note A) at 25oC  
mW  
Operating Junction and Storage Temperature Range  
Thermal Resistance, Junction to Ambient  
TJ  
-55 to + 150  
325  
oC  
RθJA  
oC/W  
NOTE:  
A.Mounted on 5.0mm2(.013mm thick) land areas  
October 01,2010-REV.00  
PAGE . 1  

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