5秒后页面跳转
PDTC115TM PDF预览

PDTC115TM

更新时间: 2024-11-26 20:45:11
品牌 Logo 应用领域
恩智浦 - NXP 开关晶体管
页数 文件大小 规格书
10页 71K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.50 MM, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN, BIP General Purpose Small Signal

PDTC115TM 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-101包装说明:1 X 0.60 MM, 0.50 MM, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.29
其他特性:BUILT IN BIAS RESISTOR外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PBCC-N3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PDTC115TM 数据手册

 浏览型号PDTC115TM的Datasheet PDF文件第2页浏览型号PDTC115TM的Datasheet PDF文件第3页浏览型号PDTC115TM的Datasheet PDF文件第4页浏览型号PDTC115TM的Datasheet PDF文件第5页浏览型号PDTC115TM的Datasheet PDF文件第6页浏览型号PDTC115TM的Datasheet PDF文件第7页 
PDTC115T series  
NPN resistor-equipped transistors; R1 = 100 k, R2 = open  
Rev. 04 — 17 February 2005  
Product data sheet  
1. Product profile  
1.1 General description  
NPN resistor-equipped transistors.  
Table 1:  
Product overview  
Type number  
Package  
Philips  
PNP complement  
JEITA  
SC-75  
SC-59A  
SC-101  
SC-43A  
-
PDTC115TE  
PDTC115TK  
PDTC115TM  
PDTC115TS[1]  
PDTC115TT  
PDTC115TU  
SOT416  
SOT346  
SOT883  
SOT54 (TO-92)  
SOT23  
PDTA115TE  
PDTA115TK  
PDTA115TM  
PDTA115TS  
PDTA115TT  
PDTA115TU  
SOT323  
SC-70  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).  
1.2 Features  
Built-in bias resistor  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
1.3 Applications  
General-purpose switching and  
Circuit drivers  
amplification  
Inverter and interface circuits  
1.4 Quick reference data  
Table 2:  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
output current (DC)  
bias resistor 1 (input)  
open base  
-
-
-
-
100  
130  
mA  
kΩ  
R1  
70  
100  

与PDTC115TM相关器件

型号 品牌 获取价格 描述 数据表
PDTC115TMB NEXPERIA

获取价格

NPN resistor-equipped transistor; R1 = 100 kΩ
PDTC115TS PHILIPS

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
PDTC115TS NXP

获取价格

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN,
PDTC115TT NXP

获取价格

Low VCEsat (BISS) transistors
PDTC115TT NEXPERIA

获取价格

NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = openProduction
PDTC115TU NXP

获取价格

Low VCEsat (BISS) transistors
PDTC115TU NEXPERIA

获取价格

NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = openProduction
PDTC115TU,115 NXP

获取价格

PDTC115T series - NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open SC-70 3-Pin
PDTC123 NXP

获取价格

NPN resistor-equipped transistor
PDTC123E NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm