是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-92 | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.68 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTC115ET | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTC115ET | NEXPERIA |
获取价格 |
NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmProduction | |
PDTC115ET,215 | NXP |
获取价格 |
PDTC115E series - NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm TO-236 3 | |
PDTC115EU | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW | |
PDTC115EU | NEXPERIA |
获取价格 |
NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhmProduction | |
PDTC115EU,115 | NXP |
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PDTC115E series - NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm SC-70 3- | |
PDTC115T | NXP |
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NPN resistor-equipped transistors; R1 =100 kW, R2 open | |
PDTC115TE | NXP |
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100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN | |
PDTC115TK | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 =100 kW, R2 open | |
PDTC115TM | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.50 MM, LEADLESS, |