Datasheet > PDTC115EMB,315

PDTC115EMB,315

更新时间： 2024-11-26 20:08:27

品牌	Logo	应用领域
恩智浦 - NXP		光电二极管
页数	文件大小	规格书
11页	698K
描述
PDTC115EMB - NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ DFN 3-Pin

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中文翻译

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技术参数
数据手册

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PDTC115EMB,315 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	DFN	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.79
Base Number Matches：	1

PDTC115EMB,315 数据手册

PDTC115EMB

SOT883B

NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ

Rev. 1 — 1 June 2012

Product data sheet

1. Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3

(SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA115EMB.

1.2 Features and benefits

 20 mA output current capability

 Reduces component count

 Built-in bias resistors

 Simplifies circuit design

 AEC-Q101 qualified

 Leadless ultra small SMD plastic

package

 Reduces pick and place costs

 Low package height of 0.37 mm

1.3 Applications

 Low-current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors

in digital applications

 Mobile applications

1.4 Quick reference data

Table 1.

Symbol

V_CEO

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter

voltage

open base

I_O

output current

bias resistor 1 (input)

bias resistor ratio

T_amb= 25 °C

0.8

100

130

1.2

kΩ

R2/R1

12 3 4 5 6 7...11

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