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PDTC114YUT/R PDF预览

PDTC114YUT/R

更新时间: 2024-02-18 20:29:42
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
8页 69K
描述
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal

PDTC114YUT/R 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.1Is Samacsys:N
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTC114YUT/R 数据手册

 浏览型号PDTC114YUT/R的Datasheet PDF文件第2页浏览型号PDTC114YUT/R的Datasheet PDF文件第3页浏览型号PDTC114YUT/R的Datasheet PDF文件第4页浏览型号PDTC114YUT/R的Datasheet PDF文件第5页浏览型号PDTC114YUT/R的Datasheet PDF文件第6页浏览型号PDTC114YUT/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTC114EE  
NPN resistor-equipped transistor  
1999 May 18  
Product specification  
Supersedes data of 1998 Nov 26  

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