PDTB123TS

更新时间： 2024-11-25 06:00:07

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
10页	121K
描述
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

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PDTB123TS 数据手册

PDTB123T series

PNP 500 mA, 50 V resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = open

Rev. 03 — 16 November 2009

Product data sheet

1. Product profile

1.1 General description

PNP Resistor-Equipped Transistors (RET) family.

Table 1. Product overview

Type number

Package

NXP

NPN complement

JEITA

SC-59A

SC-43A

JEDEC

TO-236

TO-92

PDTB123TK

PDTB123TS^[1]

PDTB123TT

SOT346

SOT54

SOT23

PDTD123TK

PDTD123TS

PDTD123TT

TO-236AB

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

Built-in bias resistors

Reduces component count

Simplifies circuit design

500 mA output current capability

Reduces pick and place costs

1.3 Applications

Digital application in automotive and

Cost-saving alternative for BC807 series

industrial segments

in digital applications

Controlling IC inputs

Switching loads

1.4 Quick reference data

Table 2.

Symbol

V_CEO

I_O

Quick reference data

Parameter

Conditions

Min

Typ

Max

−50

Unit

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

open base

−500

2.86

kΩ

1.54

2.2

12 3 4 5 6 7...10

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