是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOT-23 |
包装说明: | PLASTIC PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.23 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 1 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.25 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PDTB123TT | NEXPERIA |
功能相似 |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = openProduction | |
PDTB123YT | NEXPERIA |
功能相似 |
50 V, 500 mA PNP resistor-equipped transistor | |
PDTB123TT,215 | NXP |
功能相似 |
PDTB123TT - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open TO-236 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTB123ET,215 | NXP |
获取价格 |
PDTB123ET - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm TO | |
PDTB123ET,235 | NXP |
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TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI | |
PDTB123EU | NEXPERIA |
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500 mA, 50 V PNP resistor-equipped transistors | |
PDTB123T | NXP |
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PNP 500 mA, 50 V resistor-equipped transistor | |
PDTB123TK | NXP |
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PNP 500 mA, 50 V resistor-equipped transistor | |
PDTB123TK,115 | NXP |
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PDTB123TK | |
PDTB123TS | NXP |
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PNP 500 mA, 50 V resistor-equipped transistor | |
PDTB123TS,126 | NXP |
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PDTB123TS | |
PDTB123TT | NXP |
获取价格 |
PNP 500 mA, 50 V resistor-equipped transistor | |
PDTB123TT | NEXPERIA |
获取价格 |
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = openProduction |