Datasheet > PDTB123ES,126

PDTB123ES,126

更新时间： 2024-11-25 13:31:35

品牌	Logo	应用领域
恩智浦 - NXP		光电二极管
页数	文件大小	规格书
10页	121K
描述
PDTB123ES

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技术参数
数据手册

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PDTB123ES,126 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.78	Base Number Matches：	1

PDTB123ES,126 数据手册

PDTB123E series

PNP 500 mA, 50 V resistor-equipped transistors;

R1 = 2.2 kΩ, R2 = 2.2 kΩ

Rev. 02 — 16 November 2009

Product data sheet

1. Product profile

1.1 General description

500 mA PNP Resistor-Equipped Transistors (RET) family.

Table 1. Product overview

Type number

Package

NXP

NPN complement

JEITA

SC-59A

SC-43A

JEDEC

TO-236

TO-92

PDTB123EK

PDTB123ES^[1]

PDTB123ET

SOT346

SOT54

SOT23

PDTD123EK

PDTD123ES

PDTD123ET

TO-236AB

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

Built-in bias resistors

Reduces component count

Simplifies circuit design

500 mA output current capability

Reduces pick and place costs

±10 % resistor ratio tolerance

1.3 Applications

Digital application in automotive and

Cost-saving alternative for BC807 series

industrial segments

in digital applications

Controlling IC inputs

Switching loads

1.4 Quick reference data

Table 2.

Symbol

V_CEO

I_O

Quick reference data

Parameter

Conditions

Min

Typ

Max

−50

Unit

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

bias resistor ratio

open base

−500

2.86

1.1

kΩ

1.54

0.9

2.2

1.0

R2/R1

12 3 4 5 6 7...10

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