生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | 风险等级: | 5.59 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
PDTA143EEF | NXP | PNP resistor-equipped transistors; R1 = 4.7 k-ohm, R2 = 4.7 k-ohm |
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PDTA143EEF,115 | NXP | PDTA143EEF |
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PDTA143EET/R | NXP | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP Gene |
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PDTA143EK | NXP | PNP resistor-equipped transistor |
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PDTA143EK,115 | NXP | PDTA143EK |
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PDTA143EK-T | NXP | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, |
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