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PDTA123YM

更新时间: 2024-09-24 10:14:59
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关
页数 文件大小 规格书
18页 116K
描述
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW

PDTA123YM 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SC-101包装说明:1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.22
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 4.5
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):35JESD-30 代码:R-PBCC-N3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTA123YM 数据手册

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PDTA123Y series  
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 10 kΩ  
Rev. 04 — 3 September 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP Resistor-Equipped Transistors (RET).  
Table 1.  
Product overview  
Type number  
Package  
NXP  
NPN  
complement  
JEITA  
SC-75  
SC-59A  
SC-101  
SC-43A  
-
JEDEC  
PDTA123YE  
PDTA123YK  
PDTA123YM  
PDTA123YS[1]  
PDTA123YT  
PDTA123YU  
SOT416  
SOT346  
SOT883  
SOT54  
SOT23  
SOT323  
-
PDTC123YE  
PDTC123YK  
PDTC123YM  
PDTC123YS  
PDTC123YT  
PDTC123YU  
TO-236  
-
TO-92  
TO-236AB  
-
SC-70  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2)  
1.2 Features  
I Built-in bias resistors  
I Reduces component count  
I Simplifies circuit design  
I Reduces pick and place costs  
1.3 Applications  
I General purpose switching and  
I Circuit drivers  
amplification  
I Inverter and interface circuits  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
-
Typ  
-
Max  
50  
Unit  
V
collector-emitter voltage  
output current (DC)  
bias resistor 1 (input)  
bias resistor ratio  
open base  
-
-
100  
2.86  
5.5  
mA  
kΩ  
R1  
1.54  
3.6  
2.2  
4.5  
R2/R1  

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