PDTA123Y

更新时间： 2024-11-12 10:14:59

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
18页	116K
描述
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW

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PDTA123Y 数据手册

PDTA123Y series

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 04 — 3 September 2009

Product data sheet

1. Product proﬁle

1.1 General description

PNP Resistor-Equipped Transistors (RET).

Table 1.

Product overview

Type number

Package

NXP

NPN

complement

JEITA

SC-75

SC-59A

SC-101

SC-43A

JEDEC

PDTA123YE

PDTA123YK

PDTA123YM

PDTA123YS^[1]

PDTA123YT

PDTA123YU

SOT416

SOT346

SOT883

SOT54

SOT23

SOT323

PDTC123YE

PDTC123YK

PDTC123YM

PDTC123YS

PDTC123YT

PDTC123YU

TO-236

TO-92

TO-236AB

SC-70

[1] Also available in SOT54A and SOT54 variant packages (see Section 2)

1.2 Features

I Built-in bias resistors

I Reduces component count

I Simpliﬁes circuit design

I Reduces pick and place costs

1.3 Applications

I General purpose switching and

I Circuit drivers

ampliﬁcation

I Inverter and interface circuits

1.4 Quick reference data

Table 2.

Symbol

V_CEO

I_O

Quick reference data

Parameter

Conditions

Min

Typ

Max

−50

Unit

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

bias resistor ratio

open base

−100

2.86

5.5

kΩ

1.54

3.6

2.2

4.5

R2/R1

12 3 4 5 6 7...18

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PDTA123YE	NXP	获取价格	PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
PDTA123YK	NXP	获取价格	PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
PDTA123YM	NXP	获取价格	PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
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