是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SC-70 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.22 | 其他特性: | BUILT-IN BIAS RESISTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTA123Y | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW | |
PDTA123YE | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW | |
PDTA123YK | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW | |
PDTA123YM | NXP |
获取价格 |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW | |
PDTA123YM | NEXPERIA |
获取价格 |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhmProduction | |
PDTA123YM,315 | NXP |
获取价格 |
PDTA123Y series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm DFN 3-Pin | |
PDTA123YMB | NXP |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA | |
PDTA123YMB | NEXPERIA |
获取价格 |
PNP resistor-equipped transistor; R1 = 2.2 kΩ | |
PDTA123YMB,315 | NXP |
获取价格 |
PDTA123YMB - PNP resistor-equipped transistor | |
PDTA123YQB | NEXPERIA |
获取价格 |
Production |