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PDM41532LA20SOATR PDF预览

PDM41532LA20SOATR

更新时间: 2024-01-03 17:28:18
品牌 Logo 应用领域
IXYS 静态存储器光电二极管
页数 文件大小 规格书
10页 230K
描述
Standard SRAM, 64KX16, 20ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

PDM41532LA20SOATR 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.32
最长访问时间:20 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:18.41 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.0005 A
最小待机电流:2.5 V子类别:SRAMs
最大压摆率:0.12 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

PDM41532LA20SOATR 数据手册

 浏览型号PDM41532LA20SOATR的Datasheet PDF文件第2页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第3页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第4页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第5页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第6页浏览型号PDM41532LA20SOATR的Datasheet PDF文件第7页 
PDM41532  
PRELIMINARY  
64K x 16 CMOS  
Static RAM  
1
2
Description  
Features  
The PDM41532 is a high-performance CMOS static  
RAM organized as 65,536 x 16 bits. The PDM41532  
features low power dissipation using chip enable  
(CE) and has an output enable input (OE) for fast  
memory access. Byte access is supported by upper  
and lower byte controls.  
High-speed access times  
- Com’l: 10, 12, 15 and 20 ns  
- Ind: 12, 15 and 20 ns  
Low power operation (typical)  
- PDM41532SA  
Active: 350 mW  
Standby: 50 mW  
- PDM41532LA  
Active: 300 mW  
3
The PDM41532 operates from a single 5.0V power  
supply and all inputs and outputs are fully TTL-  
compatible. The PDM41532 comes in two versions,  
the standard power version PDM41532SA and a low  
power version PDM41532LA. The two versions are  
functionally the same and only differ in their power  
consumption.  
Standby: 25mW  
High-density 64K x 16 architecture  
Single +5V (±10%) power supply  
Fully static operation  
TTL-compatible inputs and outputs  
Output buffer controls: OE  
Data byte controls: LB, UB  
Packages:  
The PDM41532 is available in a 44-pin 400 mil plas-  
tic SOJ and a 44-pin plastic TSOP (II) package  
suitable for high-density surface assembly and is  
suitable for use in high-speed applications such as  
cache memory and high-speed storage.  
5
6
Plastic SOJ (400 mil) - SO  
Plastic TSOP (II) - T  
7
Functional Block Diagram  
Vcc  
8
Vss  
Memory  
A8-A0  
Cell  
Array  
256 x 128 x 32  
9
Data  
Input/  
Output  
Buffer  
I/O15-I/O0  
Sense Amp  
10  
11  
12  
Column  
Decoder  
WE  
OE  
UB  
LB  
Control  
Logic  
Column  
Address  
Buffer  
Clock  
Generator  
CE  
A15-A9  
Rev. 1.3 - 4/10/98  
1

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