Datasheet > PDM41257SA8SOITR

PDM41257SA8SOITR

更新时间： 2024-11-07 23:27:11

品牌	Logo	应用领域
其他 - ETC		静态存储器
页数	文件大小	规格书
7页	295K
描述
x1 SRAM

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PDM41257SA8SOITR 数据手册

PDM41257

256K Static RAM

256K x 1-Bit

Description

Features

The PDM41257 is a high-performance CMOS static

RAM organized as 262,144 x 1 bit. Writing to this

device is accomplished when the write enable (WE)

and the chip enable (CE) inputs are both LOW.

Reading is accomplished when WE remains HIGH

and CE goes LOW.

■ High-speed access times

Com’l: 7, 8, 10, 12 and 15 ns

Industrial: 8, 10, 12 and 15 ns

■ Low power operation (typical)

- PDM41257SA

Active: 400 mW

Standby: 150 mW

- PDM41257LA

Active: 350 mW

Standby: 25 mW

The PDM41257 operates from a single +5V power

supply and all the inputs and outputs are fully TTL-

compatible. The PDM41257 comes in two versions,

the standard power version PDM41257SA and a low

power version the PDM41257LA. The two versions

are functionally the same and only differ in their

power consumption.

■ Single +5V (±10%) power supply

■ TTL compatible inputs and outputs

■ Packages

The PDM41257 is available in a 24-pin 300-mil

plastic SOJ for surface mount applications.

Plastic SOJ (300 mil) - SO

Functional Block Diagram

•

Memory

Matrix

•

Addresses

Decoder

A17

• • • • •

Column I/O

DIN

DOUT

Rev. 2.2 - 4/27/98

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
PDM41257SA8SOITY	IXYS	获取价格	Standard SRAM, 256KX1, 8ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24
PDM41257SA8SOTR	IXYS	获取价格	Standard SRAM, 256KX1, 8ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24
PDM41257SA8SOTY	IXYS	获取价格	Standard SRAM, 256KX1, 8ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-24
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