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PD6D2BA PDF预览

PD6D2BA

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 194K
描述
TO-252

PD6D2BA 数据手册

 浏览型号PD6D2BA的Datasheet PDF文件第2页浏览型号PD6D2BA的Datasheet PDF文件第3页浏览型号PD6D2BA的Datasheet PDF文件第4页 
N-Channel Enhancement Mode  
Field Effect Transistor  
PD6D2BA  
NIKO-SEM  
TO-252  
Halogen-Free & Lead-Free  
D
PRODUCT SUMMARY  
V(BR)DSS  
40V  
RDS(ON)  
ID  
1. GATE  
2. DRAIN  
3. SOURCE  
G
25mΩ  
21A  
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
UNITS  
40  
±20  
21  
V
V
Gate-Source Voltage  
VGS  
TC = 25 °C  
Continuous Drain Current2  
ID  
TC = 100 °C  
13  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
50  
13  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
EAS  
8.4  
mJ  
W
24  
PD  
Power Dissipation  
9.6  
Junction & Storage Temperature Range  
TJ, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNITS  
°C / W  
Junction-to-Case  
5.2  
Junction-to-Ambient  
62.5  
RJA  
1Pulse width limited by maximum junction temperature.  
2Package limitation current is 15A  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
LIMITS  
MIN TYP MAX  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
STATIC  
UNIT  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V(BR)DSS  
VGS(th)  
IGSS  
40  
V
GS = 0V, ID = 250A  
V
1.3 1.7  
3
VDS = VGS, ID = 250A  
VDS = 0V, VGS = ±20V  
VDS = 32V, VGS = 0V  
±100 nA  
1
Zero Gate Voltage Drain Current  
IDSS  
A  
VDS = 30V, VGS = 0V, TJ = 125 °C  
10  
V
GS = 4.5V, ID = 12A  
20  
18  
35  
Drain-Source On-State  
Resistance1  
RDS(ON)  
mΩ  
VGS = 10V , ID = 18A  
25  
F-30-1  
REV1.0  
1

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