Datasheet > PD55008-E_10

PD55008-E_10

更新时间： 2024-11-25 06:01:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
25页	498K
描述
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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PD55008-E_10 数据手册

PD55008-E

PD55008S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ P = 8 W with 17dB gain @ 500 MHz/12.5 V

OUT

■ New RF plastic package

PowerSO-10RF

(formed lead)

Description

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12 V in common source mode at

frequencies up to 1 GHz.

PowerSO-10RF

(straight lead)

The device boasts the excellent gain, linearity and

reliability of ST’s latest LDMOS technology

mounted in the first true SMD plastic RF power

package, PowerSO-10RF. The device’s superior

linearity performance makes it an ideal solution

for car mobile radio.

Figure 1.

Pin connection

Source

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Drain

Gate

Mounting recommendations are available in

www.st.com/rf/ (look for application note

AN1294).

Table 1.

Device summary

Order code

Package

Packing

PD55008-E

PD55008S-E

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

Tube

PD55008TR-E

PD55008STR-E

Tape and reel

May 2010

Doc ID 12259 Rev 2

1/25

www.st.com

12 3 4 5 6 7...25

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