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PD55008-E PDF预览

PD55008-E

更新时间: 2024-11-25 03:42:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
28页 415K
描述
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PD55008-E 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:0.55
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:165 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):52.8 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

PD55008-E 数据手册

 浏览型号PD55008-E的Datasheet PDF文件第2页浏览型号PD55008-E的Datasheet PDF文件第3页浏览型号PD55008-E的Datasheet PDF文件第4页浏览型号PD55008-E的Datasheet PDF文件第5页浏览型号PD55008-E的Datasheet PDF文件第6页浏览型号PD55008-E的Datasheet PDF文件第7页 
PD55008-E  
PD55008S-E  
RF POWER transistor, LDMOST plastic family  
N-Channel enhancement-mode lateral MOSFETs  
General features  
Excellent thermal stability  
Common source configuration  
P = 8W with 17dB gain @ 500MHz / 12.5V  
OUT  
New RF plastic package  
PowerSO-10RF  
(formed lead)  
Description  
The PD55008 is a common source N-Channel,  
enhancement-mode lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It  
operates at 12 V in common source mode at  
frequencies up to 1 GHz.  
PD55008 boasts the excellent gain, linearity and  
reliability of ST’s latest LDMOS technology  
mounted in the first true SMD plastic RF power  
package, PowerSO-10RF. PD55008’s superior  
linearity performance makes it an ideal solution  
for car mobile radio.  
PowerSO-10RF  
(straight lead)  
Pin connection  
Source  
The PowerSO-10 plastic package, designed to  
offer high reliability, is the first ST JEDEC  
approved, high power SMD package. It has been  
specially optimized for RF needs and offers  
excellent RF performances and ease of  
assembly.  
Drain  
Gate  
Mounting recommendations are available in  
www.st.com/rf/ (look for application note AN1294)  
Order codes  
Part number  
Package  
Packing  
PD55008-E  
PD55008S-E  
PD55008TR-E  
PD55008STR-E  
PowerSO-10RF (formed lead)  
PowerSO-10RF (straight lead)  
PowerSO-10RF (formed lead)  
PowerSO-10RF (straight lead)  
Tube  
Tube  
Tape and reel  
Tape and reel  
April 2006  
Rev 1  
1/28  
www.st.com  
28  

PD55008-E 替代型号

型号 品牌 替代类型 描述 数据表
PD55008TR-E STMICROELECTRONICS

完全替代

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PD55008STR-E STMICROELECTRONICS

完全替代

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PD55008S-E STMICROELECTRONICS

类似代替

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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