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PD55008 PDF预览

PD55008

更新时间： 2024-02-19 15:38:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频场效应晶体管光电二极管放大器
页数 文件大小 规格书
10页 120K
描述
RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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中文翻译

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PD55008 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SOT包装说明：ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
针数：10Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：25 weeks
风险等级：5.04Is Samacsys：N
其他特性：HIGH RELIABILITY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：4 A最大漏极电流 (ID)：4 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：ULTRA HIGH FREQUENCY BAND
JESD-30 代码：R-PDSO-G2JESD-609代码：e3
湿度敏感等级：3元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：165 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：250极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：52.8 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - annealed端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：30
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

PD55008 数据手册

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PD55008 - PD55008S  
RF POWER TRANSISTORS  
LdmoST  
The  
Plastic FAMILY  
PRELIMINARY DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
• EXCELLENT THERMAL STABILITY  
• COMMON SOURCE CONFIGURATION  
• POUT = 8 W with 17 dB gain @ 500 MHz /  
12.5V  
PowerSO-10RF  
(Formed Lead)  
• NEW RF PLASTIC PACKAGE  
ORDER CODE  
PD55008  
BRANDING  
XPD55008  
DESCRIPTION  
The PD55008 is a common source N-Channel, en-  
hancement-mode, lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It operates  
at 12V in common source mode at frequencies of  
up to 1GHz. PD55008 boasts the excellent gain,  
linearity and reliability of ST’s latest LDMOS tech-  
nology mounted in the first true SMD plastic RF  
power package, PowerSO-10RF. PD55008’s su-  
perior linearity performance makes it an ideal so-  
lution for car mobile radio.  
PowerSO-10RF  
(Straight Lead)  
ORDER CODE  
PD55008S  
BRANDING  
XPD55008S  
The PowerSO-10 plastic package, designed to of-  
fer high reliability, is the first ST JEDEC approved,  
high power SMD package. It has been specially  
optimized for RF needs and offers excellent RF  
performances and ease of assembly.  
= 25 OC)  
ABSOLUTE MAXIMUM RATINGS(T  
CASE  
Parameter  
Drain Source Voltage  
Symbol  
Value  
Unit  
V
40  
±20  
V
V
(BR)DSS  
V
Gate-Source Voltage  
Drain Current  
GS  
I
4
A
D
0
P
52.8  
W
OC  
OC  
DISS  
Power Dissipation (@ Tc = 70 C)  
T
Max. Operating Junction Temperature  
Storage Temperature  
165  
j
T
-65 to 165  
STG  
THERMAL DATA  
R
Junction-Case Thermal Resistance  
1.8  
O
th(j-c)  
C/W  
May 2000  
1/10  
1234567...10

中文翻译

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PD55008 替代型号

型号 品牌 替代类型 描述 数据表
PD55008S-E STMICROELECTRONICS

类似代替

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PD55008TR-E STMICROELECTRONICS

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