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PD500-1XX PDF预览

PD500-1XX

更新时间: 2024-11-19 03:42:51
品牌 Logo 应用领域
ANADIGICS 光电二极管光电二极管
页数 文件大小 规格书
2页 124K
描述
500レm InGaAs Photodiode

PD500-1XX 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.61Is Samacsys:N
Base Number Matches:1

PD500-1XX 数据手册

 浏览型号PD500-1XX的Datasheet PDF文件第2页 
PD500  
500μm InGaAs Photodiode  
FEATURES  
Planar Structure  
Dielectric Passivation  
High Shunt Resistance  
High Responsivity  
APPLICATIONS  
PD500-0xx  
Ceramic Sub-Mount  
PD500-1xx  
TO can Package  
High Sensitivity Instrumentation  
Laser Back Facet Monitoring  
PRODUCT DESCRIPTION  
The PD500 is an InGaAs photodiode with a  
photosensitive region 500μm in diameter. It is  
intended for use in high sensitivity  
instrumentation, laser back-facet monitoring  
and low bit rate communication systems.  
Planar semiconductor design and dielectric  
passivation provide superior noise performance.  
The device can be assembled on a ceramic sub-  
mount or in an hermetic TO46 can. Custom  
packages are an option.  
ELECTRICAL CHARACTERISTICS  
Table 1: Electrical Specifications  
PARAMETER  
MIN  
TYP  
MAX  
UNIT  
nA  
Dark Current (ID) (1)  
Capacitance (2)  
-
-
25  
-
-
-
-
-
-
20  
pF  
Responsivity at 1310nm  
Responsivity at 1550nm  
Rise/Fall time  
Shunt Resistance (Class A) (2)  
0.80  
0.85  
-
0.90  
0.95  
3
A/W  
A/W  
ns  
50  
-
M  
(1) 5V reverse bias  
(2) 0V reverse bias  

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